Citations refer to the original publication, not to a Scieee localized version.
Beltrán, A. M., Duguay, S., Strenger, C., Cristiano, F., Schamm-Chardon, S., & Bauer, A. J. (2015). Atomic scale characterization of SiO2/4H-SiC interfaces in MOSFETs devices. Elsevier. https://doi.org/10.1016/j.ssc.2015.08.017
Beltrán, Ana M., et al. Atomic scale characterization of SiO2/4H-SiC interfaces in MOSFETs devices. Elsevier, 2015. https://doi.org/10.1016/j.ssc.2015.08.017.
Beltrán, Ana M., S Duguay, C Strenger, F. Cristiano, S. Schamm-Chardon, and A.J. Bauer. Atomic scale characterization of SiO2/4H-SiC interfaces in MOSFETs devices. Elsevier, 2015. https://doi.org/10.1016/j.ssc.2015.08.017.
Beltrán, A. M. et al. (2015) Atomic scale characterization of SiO2/4H-SiC interfaces in MOSFETs devices. Elsevier. Available at: https://doi.org/10.1016/j.ssc.2015.08.017.
A. M. Beltrán, S. Duguay, C. Strenger, F. Cristiano, S. Schamm-Chardon, and A. J. Bauer, “Atomic scale characterization of SiO2/4H-SiC interfaces in MOSFETs devices,” Elsevier, 2015, doi: 10.1016/j.ssc.2015.08.017.
@misc{beltran2015atomic,
author = {Beltrán, Ana M. and Duguay, S and Strenger, C and Cristiano, F. and Schamm-Chardon, S. and Bauer, A.J.},
title = {Atomic scale characterization of SiO2/4H-SiC interfaces in MOSFETs devices},
year = {2015},
publisher = {Elsevier},
doi = {10.1016/j.ssc.2015.08.017},
url = {https://doi.org/10.1016/j.ssc.2015.08.017}
}
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