Citations refer to the original publication, not to a Scieee localized version.
Urain Echart, Á., Río Orduña, D. D., Luján Martínez, C. I., Kantanen, M., & Berenguer Pérez, R. J. (2024). A G-Band SiGe BiCMOS LNA With an Area Efficient Built-In Temperature Compensation Circuit and Robust to TID Radiation. Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ACCESS.2024.3465850
Urain Echart, Álvaro, et al. A G-Band SiGe BiCMOS LNA With an Area Efficient Built-In Temperature Compensation Circuit and Robust to TID Radiation. Institute of Electrical and Electronics Engineers, 2024. https://doi.org/10.1109/ACCESS.2024.3465850.
Urain Echart, Álvaro, David del Río Orduña, Clara Isabel Luján Martínez, Mikko Kantanen, and Roque José Berenguer Pérez. A G-Band SiGe BiCMOS LNA With an Area Efficient Built-In Temperature Compensation Circuit and Robust to TID Radiation. Institute of Electrical and Electronics Engineers, 2024. https://doi.org/10.1109/ACCESS.2024.3465850.
Urain Echart, Á. et al. (2024) A G-Band SiGe BiCMOS LNA With an Area Efficient Built-In Temperature Compensation Circuit and Robust to TID Radiation. Institute of Electrical and Electronics Engineers. Available at: https://doi.org/10.1109/ACCESS.2024.3465850.
Á. Urain Echart, D. D. Río Orduña, C. I. Luján Martínez, M. Kantanen, and R. J. Berenguer Pérez, “A G-Band SiGe BiCMOS LNA With an Area Efficient Built-In Temperature Compensation Circuit and Robust to TID Radiation,” Institute of Electrical and Electronics Engineers, 2024, doi: 10.1109/ACCESS.2024.3465850.
@misc{urainechart2024gband,
author = {Urain Echart, Álvaro and Río Orduña, David del and Luján Martínez, Clara Isabel and Kantanen, Mikko and Berenguer Pérez, Roque José},
title = {A G-Band SiGe BiCMOS LNA With an Area Efficient Built-In Temperature Compensation Circuit and Robust to TID Radiation},
year = {2024},
publisher = {Institute of Electrical and Electronics Engineers},
doi = {10.1109/ACCESS.2024.3465850},
url = {https://doi.org/10.1109/ACCESS.2024.3465850}
}
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