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Dual broadband infrared absorptance enhanced by magnetic polaritons using graphene-covered compound metal gratings

Abstract

A dual broadband perfect absorber based on a graphene-covered compound silver (Ag) grating structure working in the infrared (0.8-2.1 mu m) regime is proposed and investigated numerically. Two distinct absorption peaks approximately 1.0 are achieved by the excitation of magnetic polaritons over a large range of incident angles from 0 to 70 degrees. The physics underlying the structure is also explained by computing interactions of electromagnetic fields with the graphene and the Ag grating. In addition, it has shown that the absorption peaks can be tuned by changing geometric parameters of the structure; however, their spectral shape and absorption remain unchanged. Furthermore, the proposed compound grating with a graphene overlay provides potential applications for infrared absorbing devices.

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Dual broadband infrared absorptance enhanced by magnetic polaritons using graphene-covered compound metal gratings

Author: Nguyen-Huu, Nghia
Publisher: Optical Society of America
Year: 2019
DOI: 10.1364/OE.27.030182
Source: https://dspace.vsb.cz/bitstreams/e1dfdc4e-fcc7-49bb-b169-6b0ffc134dd0/download
Dual b oadband in a ed abso p ance
enhanced by magne ic pola i ons using
g aphene-co e ed compound me al g a ings
NGHIA NGUYEN-HUU,1,2,3,* JAROMIR PISTORA,4 AND MICHAEL CADA2
1Nano echnology Cen e, VSB - Technical Uni e si y o Os a a, Os a a-Po uba 708 33, Czech
Republic
2Depa men o Elec ical and Compu e Enginee ing, Dalhousie Uni e si y Hali ax, No a Sco ia B3J
2X4, Canada
3LED Roadway Ligh ing L d., 115 Chain Lake D i e Hali ax, No a Sco ia B3S1B3, Canada
4Regional Ma e ials Science and Technology Cen e, Facul y o Ma e ial Technologies, VSB -Technical
Uni e si y o Os a a, Os a a-Po uba 708 33, Czech Republic
*[email p o ec ed]
Abs ac : A dual b oadband pe ec abso be based on a g aphene-co e ed compound sil e
(Ag) g a ing s uc u e wo king in he in a ed (0.8–2.1 µm) egime is p oposed and
in es iga ed nume ically. Two dis inc abso p ion peaks app oxima ely 1.0 a e achie ed by
he exci a ion o magne ic pola i ons o e a la ge ange o inciden angles om 0 o 70
deg ees. The physics unde lying he s uc u e is also explained by compu ing in e ac ions o
elec omagne ic ields wi h he g aphene and he Ag g a ing. In addi ion, i has shown ha he
abso p ion peaks can be uned by changing geome ic pa ame e s o he s uc u e; howe e ,
hei spec al shape and abso p ion emain unchanged. Fu he mo e, he p oposed compound
g a ing wi h a g aphene o e lay p o ides po en ial applica ions o in a ed abso bing
de ices.
© 2019 Op ical Socie y o Ame ica unde he e ms o he OSA Open Access Publishing Ag eemen
1. In oduc ion
Ligh enhancemen in plasmonic nanos uc u es has a ac ed a g ea a en ion o m he
esea ch communi y since i p o ides emendous applica ions o sola cells, pho ode ec o s,
senso s, nanoimaging de ices, he mal emi e s, and me ama e ial abso be s [1–12]. The
enhancemen was heo e ically and expe imen ally demons a ed due o such phenomena o
su ace plasmon pola i ons, magne ic pola i ons, Fano esonance, o ca i y esonance [13–
23]. Recen ly, a ious single- equency pe ec abso be s wo king in gigahe z, e ahe z, and
in a ed (IR) anges ha e been ac i ely in es iga ed due o hei a ious applica ions such as
IR de ec o s, bio/chemical sensing, IR imaging de ices, he mo bolome e s, and so o h [24–
32]. To be de ailed, IR pe ec abso be s we e cons uc ed based on one dimensional (1D) o
2D mul iple laye ed s uc u es comp ising a op me ama e ial laye , a middle dielec ic space
laye , and a bo om me al e lec o o silicon subs a e [15–17,23,31]. In addi ion o ha ,
abso be s based on g a ing s uc u es consis ing o a g aphene laye co e ing a
me al/dielec ic/me al o me al g a ing ha e also been s udied physically [19–21,23,33]. The
enhanced abso p ion was caused by a ious esonances occu ing ei he in he op me al, in
he space , o coupling each o he . Al hough many IR abso be s we e p oposed nume ically
and expe imen ally, hei na owly spec al bandwid hs limi ed he po en ial applica ions o
single-band abso be s.
To add ess he na ow bandwid h p oblem, abso be s ea u ing dual and mul iband
abso p ion in he IR egime ha e been p oposed wi h di e en geome ic shapes [34–37]. Fo
ins ance, hese abso be s we e designed by uning hei geome ic dimensions in a single,
mul iple uni cells, o e ically s acked mul iple laye s [36,38]. Dual-band abso be s we e
also cons uc ed based on 1D o 2D mul iple hole s uc u es wi h a g aphene o e lay
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#376454
h ps://doi.o g/10.1364/OE.27.030182
Jou nal © 2019
Recei ed 27 Aug 2019; accep ed 2 Sep 2019; published 3 Oc 2019
[18,34,35]. Simila ly, an abso be was buil based on wo di e en dielec ic space ma e ials
o by changing di e en hicknesses o he dielec ic ma e ial in a single uni cell [34,37].
Al hough he p e ious designed IR abso be s ha e p o ided e y high abso p ion e iciency,
hey owned complex geome ic s uc u es which we e no easible o be manu ac u ed and
wo ked in a na ow ange o wa eleng hs as well. The e o e, i is necessa y o design mul iple
band pe ec abso be s ea u ing an easily- ab ica ed geome y and nea uni y abso p ion.
Subwa eleng h g a ing s uc u es whose dimensions a e smalle compa able wi h inciden
ligh a e playing a i al key in ul illing he equi emen o high e icien de ices, which could
be used o build mul iple band pe ec abso be s.
Mos ecen ly, he subwa eleng h s uc u es combined wi h a g aphene o e lay ha e
shown ha he abso p ion enhancemen is g ea ly enhanced, and hey could wo k as single-
equency abso be s in he IR egion [22,39]. Howe e , compound g a ings (CG) co e ed by
a g aphene shee used o enhance dual band IR abso p ion has no been add essed ye .
Acco dingly, in his pape we design and in es iga e a dual band pe ec abso be in he nea
IR ange based on g aphene-co e ed CGs. A CG has a pe iod including mul iple noniden ical
g a ing pe iods [40], and i was also known as a double-pe iod g a ing, a dual-pi ch g a ing, a
dual-pe iod g a ing, and a complex g a ing [41–43]. On he con a y, a simple g a ing (SG)
ea u es a single pe iod [3]. In he p esen s udy he abso be exhibi s wo dis inc abso p ion
peaks wi h app oxima ely uni y abso p ance and is insensi i e o a la ge ange o inciden
angles. The physical phenomenon o enhance he abso p ance is also s udied. Fu he mo e,
he esonan wa eleng h o he wo bands can be ailo ed by a ying he geome y o he
g aphene-co e ed CG s uc u e. Gene ally, he dual band pe ec abso be is p oposed in he
p esen s udy using a compound me allic g a ing wi h a g aphene o e lay ha p o ides
p ac ical uses o enhancing abso p ion o be nea ly pe ec .
2. Theo e ical desc ip ion
Figu e 1 shows he schema ic illus a ion o a double laye ed compound g a ing (DLCG)
s uc u e made o sil e (Ag). The geome y o he DLCG s uc u e is depic ed by he pe iod
(Ʌ), he g a ing hickness d1 and he lamella wid h 1Ʌ ( 1 is he illing a io, 0 < 1 <1) o
he SG laye , and he g a ing hickness d2, he lamella wid h 2 Ʌ ( 2 is he illing a io, 0 <
2 <1) and he lamella wid h Ʌ ( is he illing a io, 0 < <1) o he CG laye . The inciden
ligh including ans e se magne ic (TM) H o ans e se elec ic wa es (TE) E a els
h ough a ee space wi h an o ien a ion de ined by he pola angle θ be ween he wa e ec o
k and he su ace no mal z. No e ha H and E deno e oscilla ion di ec ions o magne ic and
elec ic ields, espec i ely.
Fo he one-dimensional g a ing shown in Fig. 1, he elec omagne ic ield is independen
o y-axis because he wa e ec o s o all di ac ed wa es lie in he x-z plane, and hus, he e
a e no exci a ions in he y di ec ion. In his s udy, he TM wa e is used o analyses because
as demons a ed su ace plasmon pola i ons and magne ic pola i ons could only be exci ed
when he magne ic ield is in he y di ec ion. These esonances a e solely o al oge he
coupled esul ing in enhancing he abso p ion o s uc u es [22–24,28,29]. The Ag base below
he g a ing is assumed o be hick enough as an opaque, and acco dingly, he ansmi ance is
equal o 0, and he abso p ance (α) can be compu ed om one minus he e lec ance (R), α = 1
– R, whe e he e lec ance was calcula ed by he igo ous coupled-wa e analysis (RCWA)
based on Ma Lab p og amming [30]. The esul s ob ained om he RCWA and Comsol
Mul iphysics we e alida ed wi h hose in he p e ious pape s [23,28]. I has demons a ed
ha simple deep g a ings signi ican ly enhance he abso p ance o g aphene [22,23], and hus,
his manusc ip i s ly ep esen s an op imiza ion o he high abso p ance o SG and CG
s uc u es, and based on ha he cons uc ed g aphene-co e ed CG s uc u es a e hen
p oposed wi h dual band abso p ance nea ly uni y in a wa eleng h ange be ween 0.8 and 2.1
µm.
Vol. 27, No. 21 | 14 Oc 2019 | OPTICS EXPRESS 30183
In ou calcula ion, he op ical p ope y o Ag is caompu ed using a Lo enz -D ude model
[44,45] while he dielec ic unc ion o g aphene is desc ibed as 0
() 1 /( )
s
i
εω σ εωδ
=+ [46]
whe e σs, ε0, and ω a e he shee conduc ance, he acuum pe mi i i y, and he angula
equency, espec i ely. The shee conduc ance σs (σs = σD + σI) including he con ibu ion o
a D ude (in aband) e m σD and an in e band e m σI is desc ibed heo e ically and
expe imen ally in [47]. Based on he in aband and in e band exp essions [47], he pa ame e s
a e used o he calcula ion such as he chemical po en ial (µ = 0.3 eV), elaxa ion ime (τ =
10−13 s), he empe a u e T = 300K, and he g aphene hickness σ = 0.3 nm. I is no ed ha
wi h he condi ion o kBT  μ, he g aphene conduc ance is cons an (σs = σI = e2/4) in
he isible and IR egion [47]. No e ha he p ope ies o Ag a e calcula ed based on he
Lo enz D ude model ha was cons uc ed by Rakic e al. [45]. The e a e some easons using
his model. Fi s ly, he pa ame e s o he Lo en z-D ude unc ion we e i ed in a la ge ange
o ene gy om 0.125 eV (o wa eleng h o 12.4 μm) o 6 eV (o wa eleng h o 0.2 μm), and
he da a was abula ed based on expe imen al wo k o ou esea ch g oups [48] and was also
published in [49]. Secondly, he unc ion used o modeling he op ical p ope ies o 11
me als was a lexible and con enien selec ion o simula ions and op imiza ions. Las ly, he
da a was alida ed o i s consis ency o he op ical cons an s based on calcula ions o a
elaxa ion ime [50]. The esul has shown ha i s elaxa ion ime was cons an in he ee
elec on egion while o he da a displayed an uns able end [50-52].
Fig. 1. Schema ic illus a ion o he double laye ed compound Ag g a ing (DLCG). Thei
geome ies a e de ined by he g a ing pe iod Λ, he g a ing hicknesses d1 and d2, and he
lamella wid hs 1Λ, 2Λ, and Λ ( 1 is a ied illing a io o SG, 2 and a e a ied and ixed
illing a ios o CG, espec i ely). The ans e se magne ic wa e (H) (pa allel o he g a ing
g oo es o y-axis) is inciden on he g a ing wi h a wa e ec o k and an angle θ
3. Resul s and discussion
To op imize a CG abso be , we i s simula ed a SG s uc u e comp ising an Ag g a ing on
op o an Ag subs a e wi h a ixed g a ing pe iod (Ʌ = 400 nm) and a ixed hickness (d1 =
200 nm) as a unc ion o wa eleng h λ and he illing a io 1. Then, we calcula ed he SG
s uc u e wi h he same d1 o 200 nm and he illing a io o be ound wi h a high abso p ance
( 1 = 0.95) as a unc ion o wa eleng h λ and g a ing pe iod Ʌ. Finally, we simula ed he SG
wi h he ixed pa ame e s including Ʌ = 400 nm and 1 = 0.95 as a unc ion o wa eleng h λ
and g a ing hickness d1. Resul s ha e shown ha he SG ea u ing he p ope y o a deep
g a ing wi h he illing a io o 0.95 exhibi s high abso p ance in a wa eleng h ange om 1.6
Vol. 27, No. 21 | 14 Oc 2019 | OPTICS EXPRESS 30184
o 1.8 µm when he pa ame e o Ʌ and d1 a e ixed. The esul was also ag eed wi h p e ious
s udy on deep me al SG s uc u es [22,23]. When he pe iod o he deep g a ing was a ied
om 200 nm o 800 nm, he abso p ance spec um shi ed om he wa eleng h o 2.1 µm o
1.5 µm. Simila ly, when he g a ing hickness was changed om 50 nm o 800 nm, he high
abso p ion was ob ained wi h di e en hickness d1. Fo example, a single- equency abso be
wi h a high abso p ance a a peak wa eleng h o 1.1 µm o 1.6 µm could be c ea ed wi h a
hickness o 400 nm o 600 nm, espec i ely.
Finally, om he ob ained esul s a single SG could no o e a dual bandwid h and
maximum abso p ion al hough i was able o o e a high abso p ion based on he
cha ac e is ics o a deep g a ing. Acco dingly, a single CG on op o an Ag subs a e
consis ing o wo lamellae wi h di e en illing a ios ( 2 and ), he g a ing pe iod o 400 nm,
and he g a ing hickness d2 o 200 nm was in es iga ed. In e es ingly, he maximum
abso p ance o he CG was achie ed in a wide ange o 2 om 0.05 up o 0.50. No e ha he
single CG g a ing o be simula ed in he p esen s udy includes wo g a ing pe iods wi h a
ixed lamella o 180 nm ( = 0.45) and ano he is a ied ( a ied 2) wi h a condi ion sa is ied
o be a deep g a ing. F om he op imized esul s o he SG and CG s uc u es, i can be
concluded ha he double laye ed compound g a ing made o a single SG and a single CG on
op o an Ag subs a e was sui ably selec ed o he design o dual bandwid h pe ec
abso be s.
Fig. 2. Abso p ance (α) con ou s o TM wa es a no mal incidence o he double laye ed
compound Ag g a ing (a) wi h he ixed pa ame e s including Λ = 400 nm, d1 = 200 nm, and 1
= 0.95 as a unc ion o wa eleng h λ and 2, (b) wi h he ixed pa ame e s includes d1 = 200
nm, d2 = 200 nm, 1 = 0.95, and 2 = 0.45 as a unc ion o wa eleng h λ and g a ing pe iod Λ,
(c) wi h he ixed pa ame e s includes Λ = 400 nm, d1 = 200 nm, 1 = 0.95, and 2 = 0.45 as a
unc ion o wa eleng h λ and g a ing hickness d2
Figu e 2(a) exhibi s he abso p ance o TM wa es a θ = 0° o he DLCG wi h he ixed
pa ame e s including Ʌ = 400 nm, d1 = d2 = 200 nm, and 1 = 0.95 as a unc ion o he
wa eleng h λ and he illing a io 2. I is no ed ha he pa ame e s such as Ʌ = 400 nm, d1 =
200 nm, and 1 = 0.95 o he SG a e ixed since he op imal abso p ance is ound o be
maximum as analyzed abo e. F om Fig. 2(a), i can be seen ha he no mal abso p ance o
he DLCG is ob ained wi h a maximum alue in a wide ange o he illing a io om 0.1 o
0.45; howe e , a 2 = 0.45 hey a e wo dis inc peaks appea ing a wa eleng hs o a ound
1.17 µm and 1.7 µm. The illing a io, 2 = 0.45, is he maximum alue in a ange o 0 and
0.45 o be op imized o he DLCG, and he DLCG becomes a double laye ed simple g a ing
(DLSG) s uc u e when 2 is g ea e han 0.45 ( he DLSG is no objec i e o his s udy).
Fo he pu pose o designing dual band pe ec abso be s, om he esul compu ed in Fig.
2(a) he DLCG wi h Λ = 400 nm, d1 = 200 nm, d2 = 200 nm, 1 = 0.95, and op imal 2 = 0.45
was selec ed o a de ailed in es iga ion since i exhibi ed dual band abso p ance. Figu e 2(b)
illus a es he abso p ance (α) con ou s o he DLCG o TM wa es a no mal incidence wi h
he ixed pa ame e s includes d1 = 200 nm, d2 = 200 nm, 1 = 0.95, and 2 = 0.45 as a
unc ion o wa eleng h λ and g a ing pe iod Λ. I can be seen ha when he g a ing pe iod
Vol. 27, No. 21 | 14 Oc 2019 | OPTICS EXPRESS 30185
inc eases om 200 nm o 800 nm, he dual abso p ance peak o he DLCG shi s o sho
wa eleng hs. Meanwhile, Fig. 2(c) shows he no mal abso p ance o he DLCG wi h he ixed
pa ame e s includes Λ = 400 nm, d1 = 200 nm, 1 = 0.95, and 2 = 0.45 as a unc ion o
wa eleng h λ and g a ing hickness d2. The ea u e o he abso p ance spec um shown in Fig.
2(c) has wo bands while he e is only one band o a SG s uc u e (no shown he e);
acco dingly, wi h di e en g a ing hickness he abso be -based he CG could display a dual
band abso p ance spec um in a sho and long wa eleng h ange. The e o e, he op imal
pa ame e s o he DLCG including Λ = 400 nm, d1 = d2 = 200 nm, 1 = 0.95, and 2 = 0.45
we e selec ed since he DLCG p o ided a dual band pe ec abso p ance wo king in he nea
IR egime.
Fig. 3. (a) Schema ic illus a ion o he designed DLCG s uc u e ea u ing geome ic
pa ame e s as same as hose in Fig. 1 wi h a g aphene o e lay; and (b) No mal abso p ance
spec um o he DLCG wi h and wi hou a g aphene o e lay
Figu e 3 displays he p oposed DLCG wi h he g a ing pe iod (Ʌ = 400 nm), he g a ing
hicknesses o he SG and CG laye s (d1 = d2 = 200 nm), and he illing a ios 1 = 0.95, and
2 = 0.45 wi h a g aphene o e lay ha ing a hickness o 0.3 nm. Figu e 3(b) illus a es he
abso p ance spec um o TM wa es a θ = 0° wi h wo esonances, MP1 a λMP1 = 1.73 μm
and MP2 a λMP2 = 1.09 μm co esponding he undamen al mode and he second ha monic o
magne ic pola i ons, espec i ely. The highe o de o MP is, he peak abso p ion inc eases
[19]. I is e ealed ha he abso p ance peaks a λMP2 = 1.09 µm and λMP1 = 1.73 µm in Fig.
3(b) a e enhanced up o a maximum alue o 1.0 when he DLCG is co e ed by a g aphene
shee . In e es ingly, abso p ance spec a o he DLCG o be simula ed wi h di e en g a ing
pe iods (e.g., Λ = 600 nm and 800 nm) and ixed o he g a ing pa ame e s showed ha hey
simila ly ea u e wo modes o MPs and hei spec al bandwid hs emain unchanged al hough
he peaks shi o sho e wa eleng hs ( he esul s we e no shown he e).
Figu e 4 shows he abso p ance con ou s o he DLCG and g aphene-co e ed DLCG
s uc u es as a unc ion o wa eleng h λ and angle o incidence θ. I can be seen om Figs.
4(a) and 4(b) ha he abso p ance a he sho -wa eleng h peaks (λMP2 = 1.09 μm) o he wo
g a ing s uc u es is ound o be app oxima ely maximum in a wide ange o inciden angles
om 0 o 60°. On he con a y, he abso p ance o he CG a he long-wa eleng h peak (λMP1
= 1.73 μm) shown in Fig. 4(a) is no high in a na ow ange o inciden angles while ha o
he g aphene-co e ed DLCG shown in Fig. 4(b) is ob ained o be nea uni y o 50° and
dec eases o 0.7 o 70°. Gene ally, wi h a g aphene o e lay, he abso p ance a dual peaks o
he DLCG inc eases o he maximum alue o 1.0 and is insensi i e o a wide ange o angles
o incidence.
Vol. 27, No. 21 | 14 Oc 2019 | OPTICS EXPRESS 30186

Fig. 4. Abso p ance con ou s o (a) he DLCG and (b) g aphene-co e ed DLCG as a unc ion
o he wa eleng h and angles o incidence
To manu ac u e he p oposed DLCG s uc u e wi h such geome ies, one could i s ly
ab ica e g aphene using chemical apo deposi ion on a coppe oil and secondly e ch he
deep ench (g oo e) g a ing s uc u es based on a c yogenic e ching me hod [53–55]. To be
de ailed, he ab ica ion p ocess s a s by pa e ing g a ing lines on a polyme esis laye on
an Ag subs a e using nanoimp in and hen using ch omium shadowing and eac i e ion
e ching (RIE) o e ch he esis laye o o m an e ch mask. Con inually, deep enches o he
g a ings a e c ea ed by he c yogenic RIE, and he mask ma e ials a e ianally emo ed by a
plasma cleaning p ocess. P e ious s udies ha e demons a ed ha his cos -e icien
manu ac u ing me hod was success ully implemen ed o c ea e deep enches wi h a deep
wid h o wall hickness a io (aspec a io) up o 40 [53] and a deep ench wid h o 20 nm
wi h an aspec a io o 8 [54].
Figu es 5(a)-( ) desc ibe he magne ic and elec ic ield dis ibu ions a he esonance
wa eleng hs o magne ic pola i ons (λMP2 = 1.09 μm, λMP1 = 1.73 μm a θ = 0°) o he DLCG
wi h and wi hou a g aphene o e lay. In Figs. 5(a), 5(b), 5(d), and 5(e), he colo con ou
ep esen s he magne ic ield and he a ows indica e no malized elec ic ields. Figu es 5(c)
and 5( ) show he no malized magni ude o elec ic ield o he DLCG a λMP1 = 1.73 μm and
θ = 0° while he inse igu es display he magni ied elec ic ield a he opening o he g a ing
enches. I is seen om Figs. 5(a), 5(b), 5(d), and 5(e) ha he s ong magne ic ield aps
inside he enches (g a ing g oo es) o bo h s uc u es wi h and wi hou g aphene o e lay;
howe e , he magne ic ield occupies in he longe ench s onge han ha in he sho
ench. In addi ion o ha , he magne ic ields a λMP2 = 1.09 μm apping in he ench much
mo e han ha a λMP1 = 1.73 μm; his esul s a highe abso p ance a he highe o de MP as
seen in Figs. 3 and 4.
As an illus a ion shown in Figs. 5(c) and 5( ), he elec ic ield simila ly aps inside he
enches o he bo h g a ing s uc u es. I can be seen ha he elec ic ield shown in Fig. 5(c)
aps mo e inside he ench o he DLCG wi hou a g aphene o e lay while ha o he DLCG
co e ed by a g aphene shee shown in Fig. 5( ) concen a es less. Howe e , aking a close
look a he g aphene o e lay on he g a ing opening as seen in he inse igu e o Fig. 5( ),
one can see he elec ic ield ocsila eing s onge a he in e ace. As a esul , his makes
g aphene abso bing mo e ene gy ha is also well-ag eed wi h demons a ions in he p e ious
s udies [22,39].
Vol. 27, No. 21 | 14 Oc 2019 | OPTICS EXPRESS 30187
Fig. 5. Elec omagne ic ields o DLCG s uc u es o TM wa es a no mal incidence: (a) and
(b) he DLCG wi h and w/o g aphene a he peak λMP2 = 1.09; (d) and (e) he DLCG wi h and
w/o a g aphene shee a he peak λMP1 = 1.73 μm; (c) and ( ) he colo indica es he no malized
magni ude o he elec ic ield o he DLCG wi h and w/o a g aphene shee a he esonance
wa eleng h λ1 = 1.73 μm. The colo in Figs. (a), (b), (d), and (e) show no malized magni ude
o he magne ic ield, while he a ows indica e he no malized elec ic ield. The inse igu es
in Figs. (c) and ( ) show he enhancemen o elec ic ields (blue spo s) a he opening o he
g a ing ench.
Gene ally, Figs. 5(a)-(e) e eal he magne ic pola i ons (MPs) o be exci ed in he DLCG
wi h and wi hou a g aphene laye . The MP is a s ong coupling be ween a magne ic
esonance inside g a ing s uc u es and ex e nal elec omagne ic wa es. As shown in hese
igu es, he ime- a ying magne ic ield pa allel o he y di ec ion gene a es a closed cu en
loop a ound he enches in he s uc u es whe e he s ong localized magne ic ield is c ea ed,
and i hen o ms he MP (i is known as Lenz’s law). In addi ion o ha , he e is no
occu ence o su ace plasmon pola i ons based on he elec omagne ic calcula ion shown in
he abo e igu es. The e o e, he enhancemen o abso p ance in he g aphene-co e ed DLCG
s uc u es was caused by he magne ic pola i on exci a ion wi h wo modes o esonances.
4. Conclusion
The manusc ip has p esen ed he simple design o he no el plasmonic s uc u e, namely he
g aphene-co e ed double laye ed compound Ag g a ing wo king as a dual band pe ec
abso be . I s abso p ance was ound o be 100% and i s dual band spec um was insensi i e o
a la ge ange o inciden angles om 0 o 70°. The physics behind he DLCG wi h he
g aphene o e lay was demons a ed due o he exci a ion o he magne ic pola i ons.
Fu he mo e, he p oposed s uc u e easible o be manu ac u ed p o ides emendous
applica ions o designing mul iple band pe ec IR abso be s based on g aphene-co e ed
compound me allic g a ings.
Vol. 27, No. 21 | 14 Oc 2019 | OPTICS EXPRESS 30188
Funding
RMSTC (CZ.1.05/2.1.00/19.0387).
Acknowledgmen s
The au ho s a e much g a e ul o he inancial suppo s unde he p ojec No.
CZ.1.05/2.1.00/19.0387 “De elopmen o esea ch and de elopmen basis o RMSTC” wi hin
he ame o he ope a ion p og am, Resea ch and De elopmen o Inno a ions, and he
S uc u al Funds and he s a e budge o he Czech Republic.
Re e ences
1. K. R. Ca chpole and A. Polman, “Plasmonic sola cells,” Op . Exp ess 16(26), 21793–21800 (2008).
2. J. N. Munday and H. A. A wa e , “La ge in eg a ed abso p ion enhancemen in plasmonic sola cells by
combining me allic g a ings and an i e lec ion coa ings,” Nano Le . 11(6), 2195–2201 (2011).
3. N. Nguyen-Huu, M. Cada, and J. Piš o a, “In es iga ion o op ical abso p ance o one-dimensionally pe iodic
silicon g a ings as sola abso be s o sola cells,” Op . Exp ess 22, A68–A79 (2014).
4. J. Hao, J. Wang, X. Liu, W. J. Padilla, L. Zhou, and M. Qiu, “High pe o mance op ical abso be based on a
plasmonic me ama e ial,” Appl. Phys. Le . 96(25), 251104 (2010).
5. Z. Yu, G. Ve onis, S. Fan, and M. L. B onge sma, “Design o midin a ed pho ode ec o s enhanced by su ace
plasmons on g a ing s uc u es,” Appl. Phys. Le . 89(15), 151116 (2006).
6. J. Rosenbe g, R. V. Shenoi, T. E. Vande elde, S. K ishna, and O. Pain e , “A mul ispec al and pola iza ion-
selec i e su ace-plasmon esonan midin a ed de ec o ,” Appl. Phys. Le . 95(16), 161101 (2009).
7. N. Liu, M. Mesch, T. Weiss, M. Hen schel, and H. Giessen, “In a ed pe ec abso be and i s applica ion as
plasmonic senso ,” Nano Le . 10(7), 2342–2348 (2010).
8. N. Nguyen-Huu, M. Cada, J. Piš o a, and K. Yasumo o, “Tunable op ical il e based on gold and sil e double-
sided g a ings and i s applica ion as plasmonic senso ,” J. Ligh wa e Technol. 32(21), 3477–3484 (2014).
9. Y. Zhao, S.-C. S. Lin, A. A. Nawaz, B. Ki aly, Q. Hao, Y. Liu, and T. J. Huang, “Beam bending ia plasmonic
lenses,” Op . Exp ess 18(22), 23458–23465 (2010).
10. M. Diem, T. Koschny, and C. M. Soukoulis, “Wide-angle pe ec abso be / he mal emi e in he e ahe z
egime,” Phys. Re . B Condens. Ma e Ma e . Phys. 79(3), 033101 (2009).
11. N. Nguyen-Huu, Y.-B. Chen, and Y.-L. Lo, “De elopmen o a pola iza ion-insensi i e he mopho o ol aic
emi e wi h a bina y g a ing,” Op . Exp ess 20(6), 5882–5890 (2012).
12. T.-J. Yen, W. J. Padilla, N. Fang, D. C. Vie , D. R. Smi h, J. B. Pend y, D. N. Baso , and X. Zhang, “Te ahe z
magne ic esponse om a i icial ma e ials,” Science 303(5663), 1494–1496 (2004).
13. J. Chen, W. Fan, P. Mao, C. Tang, Y. Liu, Y. Yu, and L. Zhang, “Tailo ing plasmon li e ime in suspended
nanoan enna a ays o high-pe o mance plasmon sensing,” Plasmonics 12(3), 529–534 (2017).
14. J. Chen, T. Zha, T. Zhang, C. Tang, Y. Yu, Y. Liu, and L. Zhang, “Enhanced magne ic ields a op ical
equency by di ac ion coupling o magne ic esonances in li ed me ama e ials,” J. Ligh wa e Technol. 35(1),
71–74 (2017).
15. J. Chen, T. Zhang, C. Tang, P. Mao, Y. Liu, Y. Yu, and Z. Liu, “Op ical magne ic ield enhancemen ia
coupling magne ic plasmons o op ical ca i y modes,” IEEE Pho onics Technol. Le . 28(14), 1529–1532 (2016).
16. J. Chen, C. Tang, P. Mao, C. Peng, D. Gao, Y. Yu, Q. Wang, and L. Zhang, “Su ace-plasmon-pola i ons-
assis ed enhanced magne ic esponse a op ical equencies in me ama e ials,” IEEE Pho onics J. 8(1), 1–7
(2016).
17. R. Feng, J. Qiu, Y. Cao, L. Liu, W. Ding, and L. Chen, “Wide-angle and pola iza ion independen pe ec
abso be based on one-dimensional ab ica ion- ole an s acked a ay,” Op . Exp ess 23(16), 21023–21031
(2015).
18. R. Feng, J. Qiu, L. Liu, W. Ding, and L. Chen, “Pa allel LC ci cui model o mul i-band abso p ion and
p elimina y design o adia i e cooling,” Op . Exp ess 22, A1713–A1724 (2014).
19. L. Wang and Z. Zhang, “Resonance ansmission o abso p ion in deep g a ings explained by magne ic
pola i ons,” Appl. Phys. Le . 95(11), 111904 (2009).
20. B. Zhao and Z. M. Zhang, “S udy o magne ic pola i ons in deep g a ings o he mal emission con ol,” J.
Quan . Spec osc. Radia . T ans . 135, 81–89 (2014).
21. B. Zhao and Z. M. Zhang, “S ong plasmonic coupling be ween g aphene ibbon a ay and me al g a ings,” ACS
Pho onics 2(11), 1611–1618 (2015).
22. B. Zhao, J. Zhao, and Z. Zhang, “Enhancemen o nea -in a ed abso p ion in g aphene wi h me al g a ings,”
Appl. Phys. Le . 105(3), 031905 (2014).
23. Q. Pan, J. Hong, G. Zhang, Y. Shuai, and H. Tan, “G aphene plasmonics o su ace enhancemen nea -in a ed
abso p i i y,” Op . Exp ess 25(14), 16400–16408 (2017).
24. Y. Q. Ye, Y. Jin, and S. He, “Omnidi ec ional, pola iza ion-insensi i e and b oadband hin abso be in he
e ahe z egime,” J. Op . Soc. Am. B 27(3), 498–504 (2010).
25. N. I. Landy, S. Sajuyigbe, J. J. Mock, D. R. Smi h, and W. J. Padilla, “Pe ec me ama e ial abso be ,” Phys.
Re . Le . 100(20), 207402 (2008).
Vol. 27, No. 21 | 14 Oc 2019 | OPTICS EXPRESS 30189
26. C.-M. Wang, Y.-C. Chang, M.-W. Tsai, Y.-H. Ye, C.-Y. Chen, Y.-W. Jiang, Y.-T. Chang, S.-C. Lee, and D. P.
Tsai, “Re lec ion and emission p ope ies o an in a ed emi e ,” Op . Exp ess 15(22), 14673–14678 (2007).
27. J. Wang, Y. Chen, J. Hao, M. Yan, and M. Qiu, “Shape-dependen abso p ion cha ac e is ics o h ee-laye ed
me ama e ial abso be s a nea -in a ed,” J. Appl. Phys. 109(7), 074510 (2011).
28. T. Maie and H. B ückl, “Wa eleng h- unable mic obolome e s wi h me ama e ial abso be s,” Op . Le . 34(19),
3012–3014 (2009).
29. Z. Song, M. Wei, Z. Wang, G. Cai, Y. Liu, and Y. Zhou, “Te ahe z abso be wi h econ igu able bandwid h
based on iso opic anadium dioxide me asu aces,” IEEE Pho onics J. 11(2), 1–7 (2019).
30. Z. Song, Z. Wang, and M. Wei, “B oadband unable abso be o e ahe z wa es based on iso opic silicon
me asu aces,” Ma e . Le . 234, 138–141 (2019).
31. M. Wei, Z. Song, Y. Deng, Y. Liu, and Q. Chen, “La ge-angle mid-in a ed abso p ion swi ch enabled by
pola iza ion-independen GST me asu aces,” Ma e . Le . 236, 350–353 (2019).
32. J. Chen, W. Fan, T. Zhang, C. Tang, X. Chen, J. Wu, D. Li, and Y. Yu, “Enginee ing he magne ic plasmon
esonances o me ama e ials o high-quali y sensing,” Op . Exp ess 25(4), 3675–3681 (2017).
33. T. Sang, J. Gao, X. Yin, H. Qi, L. Wang, and H. Jiao, “Angle-insensi i e b oadband abso p ion enhancemen o
g aphene using a mul i-g oo ed me asu ace,” Nanoscale Res. Le . 14(1), 105 (2019).
34. N. Zhang, P. Zhou, D. Cheng, X. Weng, J. Xie, and L. Deng, “Dual-band abso p ion o mid-in a ed
me ama e ial abso be based on dis inc dielec ic spacing laye s,” Op . Le . 38(7), 1125–1127 (2013).
35. B. Liu, C. Tang, J. Chen, Q. Wang, M. Pei, and H. Tang, “Dual-band ligh abso p ion enhancemen o
monolaye g aphene om su ace plasmon pola i ons and magne ic dipole esonances in me ama e ials,” Op .
Exp ess 25(10), 12061–12068 (2017).
36. H. Lee and J. Wu, “A wide-angle dual-band in a ed pe ec abso be based on me al–dielec ic–me al spli
squa e- ing and squa e a ay,” J. Phys. D Appl. Phys. 45(20), 205101 (2012).
37. J. Sun, L. Liu, G. Dong, and J. Zhou, “An ex emely b oad band me ama e ial abso be based on des uc i e
in e e ence,” Op . Exp ess 19(22), 21155–21162 (2011).
38. K. Chen, R. Ada o, and H. Al ug, “Dual-band pe ec abso be o mul ispec al plasmon-enhanced in a ed
spec oscopy,” ACS Nano 6(9), 7998–8006 (2012).
39. B. Zhao, J. Zhao, and Z. Zhang, “Resonance enhanced abso p ion in a g aphene monolaye using deep me al
g a ings,” J. Op . Soc. Am. B 32(6), 1176–1185 (2015).
40. N. Nguyen-Huu and Y.-L. Lo, “Tailo ing he op ical ansmission spec a o double-laye ed compound me allic
g a ings,” IEEE Pho onics J. 5(1), 2700108 (2013).
41. W.-C. Tan, J. R. Sambles, and T. P eis , “Double-pe iod ze o-o de me al g a ings as e ec i e selec i e
abso be s,” Phys. Re . B Condens. Ma e Ma e . Phys. 61(19), 13177–13182 (2000).
42. A. P. Hibbins, J. R. Sambles, and C. R. Law ence, “Exci a ion o ema kably nondispe si e su ace plasmons on
a nondi ac ing, dual-pi ch me al g a ing,” Appl. Phys. Le . 80(13), 2410–2412 (2002).
43. D. C. Skigin and R. A. Depine, “Di ac ion by dual-pe iod g a ings,” Appl. Op . 46(9), 1385–1391 (2007).
44. N. Nguyen-Huu, Y.-L. Lo, Y.-B. Chen, and T.-Y. Yang, “Realiza ion o in eg a ed pola ize and colo il e s
based on subwa eleng h me allic g a ings using a hyb id nume ical scheme,” Appl. Op . 50(4), 415–426 (2011).
45. A. D. Rakić, A. B. Dju išić, J. M. Elaza , and M. L. Majewski, “Op ical p ope ies o me allic ilms o e ical-
ca i y op oelec onic de ices,” Appl. Op . 37(22), 5271–5283 (1998).
46. A. Vakil and N. Enghe a, “T ans o ma ion op ics using g aphene,” Science 332(6035), 1291–1294 (2011).
47. L. Falko sky, “Op ical p ope ies o g aphene,” J. Phys.: Con . Se . 129, 012004 (2008).
48. D. W. Lynch and W. Hun e , “Commen s on he op ical cons an s o me als and an in oduc ion o he da a o
se e al me als,” in Handbook o Op ical Cons an s o Solids (Else ie , 1997), pp. 275–367.
49. E. D. Palik, Handbook o Op ical Cons an s o Solids (Academic P ess, 1998).
50. Y. Jiang, S. Pillai, and M. A. G een, “Re-e alua ion o li e a u e alues o sil e op ical cons an s,” Op . Exp ess
23(3), 2133–2144 (2015).
51. P. B. Johnson and R.-W. Ch is y, “Op ical cons an s o he noble me als,” Phys. Re . B 6(12), 4370–4379
(1972).
52. D. Nash and J. Sambles, “Su ace plasmon-pola i on s udy o he op ical dielec ic unc ion o sil e ,” J. Mod.
Op . 43, 81–91 (1996).
53. H. Miao, A. A. Gomella, N. Chedid, L. Chen, and H. Wen, “Fab ica ion o 200 nm pe iod ha d X- ay phase
g a ings,” Nano Le . 14(6), 3453–3458 (2014).
54. Y. Wu, D. Olynick, A. Goodyea , C. Pe oz, S. Dhuey, X. Liang, and S. Cab ini, “C yogenic e ching o nano-
scale silicon enches wi h esis masks,” Mic oelec on. Eng. 88(8), 2785–2789 (2011).
55. C. Welch, A. Goodyea , T. Wahlb ink, M. C. Lemme, and T. Mollenhaue , “Silicon e ch p ocess op ions o
mic o-and nano echnology using induc i ely coupled plasmas,” Mic oelec on. Eng. 83(4-9), 1170–1173 (2006).
Vol. 27, No. 21 | 14 Oc 2019 | OPTICS EXPRESS 30190