Full text
Dual b oadband in a ed abso p ance
enhanced by magne ic pola i ons using
g aphene-co e ed compound me al g a ings
NGHIA NGUYEN-HUU,1,2,3,* JAROMIR PISTORA,4 AND MICHAEL CADA2
1Nano echnology Cen e, VSB - Technical Uni e si y o Os a a, Os a a-Po uba 708 33, Czech
Republic
2Depa men o Elec ical and Compu e Enginee ing, Dalhousie Uni e si y Hali ax, No a Sco ia B3J
2X4, Canada
3LED Roadway Ligh ing L d., 115 Chain Lake D i e Hali ax, No a Sco ia B3S1B3, Canada
4Regional Ma e ials Science and Technology Cen e, Facul y o Ma e ial Technologies, VSB -Technical
Uni e si y o Os a a, Os a a-Po uba 708 33, Czech Republic
*[email p o ec ed]
Abs ac : A dual b oadband pe ec abso be based on a g aphene-co e ed compound sil e
(Ag) g a ing s uc u e wo king in he in a ed (0.8–2.1 µm) egime is p oposed and
in es iga ed nume ically. Two dis inc abso p ion peaks app oxima ely 1.0 a e achie ed by
he exci a ion o magne ic pola i ons o e a la ge ange o inciden angles om 0 o 70
deg ees. The physics unde lying he s uc u e is also explained by compu ing in e ac ions o
elec omagne ic ields wi h he g aphene and he Ag g a ing. In addi ion, i has shown ha he
abso p ion peaks can be uned by changing geome ic pa ame e s o he s uc u e; howe e ,
hei spec al shape and abso p ion emain unchanged. Fu he mo e, he p oposed compound
g a ing wi h a g aphene o e lay p o ides po en ial applica ions o in a ed abso bing
de ices.
© 2019 Op ical Socie y o Ame ica unde he e ms o he OSA Open Access Publishing Ag eemen
1. In oduc ion
Ligh enhancemen in plasmonic nanos uc u es has a ac ed a g ea a en ion o m he
esea ch communi y since i p o ides emendous applica ions o sola cells, pho ode ec o s,
senso s, nanoimaging de ices, he mal emi e s, and me ama e ial abso be s [1–12]. The
enhancemen was heo e ically and expe imen ally demons a ed due o such phenomena o
su ace plasmon pola i ons, magne ic pola i ons, Fano esonance, o ca i y esonance [13–
23]. Recen ly, a ious single- equency pe ec abso be s wo king in gigahe z, e ahe z, and
in a ed (IR) anges ha e been ac i ely in es iga ed due o hei a ious applica ions such as
IR de ec o s, bio/chemical sensing, IR imaging de ices, he mo bolome e s, and so o h [24–
32]. To be de ailed, IR pe ec abso be s we e cons uc ed based on one dimensional (1D) o
2D mul iple laye ed s uc u es comp ising a op me ama e ial laye , a middle dielec ic space
laye , and a bo om me al e lec o o silicon subs a e [15–17,23,31]. In addi ion o ha ,
abso be s based on g a ing s uc u es consis ing o a g aphene laye co e ing a
me al/dielec ic/me al o me al g a ing ha e also been s udied physically [19–21,23,33]. The
enhanced abso p ion was caused by a ious esonances occu ing ei he in he op me al, in
he space , o coupling each o he . Al hough many IR abso be s we e p oposed nume ically
and expe imen ally, hei na owly spec al bandwid hs limi ed he po en ial applica ions o
single-band abso be s.
To add ess he na ow bandwid h p oblem, abso be s ea u ing dual and mul iband
abso p ion in he IR egime ha e been p oposed wi h di e en geome ic shapes [34–37]. Fo
ins ance, hese abso be s we e designed by uning hei geome ic dimensions in a single,
mul iple uni cells, o e ically s acked mul iple laye s [36,38]. Dual-band abso be s we e
also cons uc ed based on 1D o 2D mul iple hole s uc u es wi h a g aphene o e lay
Vol. 27, No. 21 | 14 Oc 2019 | OPTICS EXPRESS 30182
#376454
h ps://doi.o g/10.1364/OE.27.030182
Jou nal © 2019
Recei ed 27 Aug 2019; accep ed 2 Sep 2019; published 3 Oc 2019
[18,34,35]. Simila ly, an abso be was buil based on wo di e en dielec ic space ma e ials
o by changing di e en hicknesses o he dielec ic ma e ial in a single uni cell [34,37].
Al hough he p e ious designed IR abso be s ha e p o ided e y high abso p ion e iciency,
hey owned complex geome ic s uc u es which we e no easible o be manu ac u ed and
wo ked in a na ow ange o wa eleng hs as well. The e o e, i is necessa y o design mul iple
band pe ec abso be s ea u ing an easily- ab ica ed geome y and nea uni y abso p ion.
Subwa eleng h g a ing s uc u es whose dimensions a e smalle compa able wi h inciden
ligh a e playing a i al key in ul illing he equi emen o high e icien de ices, which could
be used o build mul iple band pe ec abso be s.
Mos ecen ly, he subwa eleng h s uc u es combined wi h a g aphene o e lay ha e
shown ha he abso p ion enhancemen is g ea ly enhanced, and hey could wo k as single-
equency abso be s in he IR egion [22,39]. Howe e , compound g a ings (CG) co e ed by
a g aphene shee used o enhance dual band IR abso p ion has no been add essed ye .
Acco dingly, in his pape we design and in es iga e a dual band pe ec abso be in he nea
IR ange based on g aphene-co e ed CGs. A CG has a pe iod including mul iple noniden ical
g a ing pe iods [40], and i was also known as a double-pe iod g a ing, a dual-pi ch g a ing, a
dual-pe iod g a ing, and a complex g a ing [41–43]. On he con a y, a simple g a ing (SG)
ea u es a single pe iod [3]. In he p esen s udy he abso be exhibi s wo dis inc abso p ion
peaks wi h app oxima ely uni y abso p ance and is insensi i e o a la ge ange o inciden
angles. The physical phenomenon o enhance he abso p ance is also s udied. Fu he mo e,
he esonan wa eleng h o he wo bands can be ailo ed by a ying he geome y o he
g aphene-co e ed CG s uc u e. Gene ally, he dual band pe ec abso be is p oposed in he
p esen s udy using a compound me allic g a ing wi h a g aphene o e lay ha p o ides
p ac ical uses o enhancing abso p ion o be nea ly pe ec .
2. Theo e ical desc ip ion
Figu e 1 shows he schema ic illus a ion o a double laye ed compound g a ing (DLCG)
s uc u e made o sil e (Ag). The geome y o he DLCG s uc u e is depic ed by he pe iod
(Ʌ), he g a ing hickness d1 and he lamella wid h 1Ʌ ( 1 is he illing a io, 0 < 1 <1) o
he SG laye , and he g a ing hickness d2, he lamella wid h 2 Ʌ ( 2 is he illing a io, 0 <
2 <1) and he lamella wid h Ʌ ( is he illing a io, 0 < <1) o he CG laye . The inciden
ligh including ans e se magne ic (TM) H o ans e se elec ic wa es (TE) E a els
h ough a ee space wi h an o ien a ion de ined by he pola angle θ be ween he wa e ec o
k and he su ace no mal z. No e ha H and E deno e oscilla ion di ec ions o magne ic and
elec ic ields, espec i ely.
Fo he one-dimensional g a ing shown in Fig. 1, he elec omagne ic ield is independen
o y-axis because he wa e ec o s o all di ac ed wa es lie in he x-z plane, and hus, he e
a e no exci a ions in he y di ec ion. In his s udy, he TM wa e is used o analyses because
as demons a ed su ace plasmon pola i ons and magne ic pola i ons could only be exci ed
when he magne ic ield is in he y di ec ion. These esonances a e solely o al oge he
coupled esul ing in enhancing he abso p ion o s uc u es [22–24,28,29]. The Ag base below
he g a ing is assumed o be hick enough as an opaque, and acco dingly, he ansmi ance is
equal o 0, and he abso p ance (α) can be compu ed om one minus he e lec ance (R), α = 1
– R, whe e he e lec ance was calcula ed by he igo ous coupled-wa e analysis (RCWA)
based on Ma Lab p og amming [30]. The esul s ob ained om he RCWA and Comsol
Mul iphysics we e alida ed wi h hose in he p e ious pape s [23,28]. I has demons a ed
ha simple deep g a ings signi ican ly enhance he abso p ance o g aphene [22,23], and hus,
his manusc ip i s ly ep esen s an op imiza ion o he high abso p ance o SG and CG
s uc u es, and based on ha he cons uc ed g aphene-co e ed CG s uc u es a e hen
p oposed wi h dual band abso p ance nea ly uni y in a wa eleng h ange be ween 0.8 and 2.1
µm.
Vol. 27, No. 21 | 14 Oc 2019 | OPTICS EXPRESS 30183
In ou calcula ion, he op ical p ope y o Ag is caompu ed using a Lo enz -D ude model
[44,45] while he dielec ic unc ion o g aphene is desc ibed as 0
() 1 /( )
s
i
εω σ εωδ
=+ [46]
whe e σs, ε0, and ω a e he shee conduc ance, he acuum pe mi i i y, and he angula
equency, espec i ely. The shee conduc ance σs (σs = σD + σI) including he con ibu ion o
a D ude (in aband) e m σD and an in e band e m σI is desc ibed heo e ically and
expe imen ally in [47]. Based on he in aband and in e band exp essions [47], he pa ame e s
a e used o he calcula ion such as he chemical po en ial (µ = 0.3 eV), elaxa ion ime (τ =
10−13 s), he empe a u e T = 300K, and he g aphene hickness σ = 0.3 nm. I is no ed ha
wi h he condi ion o kBT μ, he g aphene conduc ance is cons an (σs = σI = e2/4) in
he isible and IR egion [47]. No e ha he p ope ies o Ag a e calcula ed based on he
Lo enz D ude model ha was cons uc ed by Rakic e al. [45]. The e a e some easons using
his model. Fi s ly, he pa ame e s o he Lo en z-D ude unc ion we e i ed in a la ge ange
o ene gy om 0.125 eV (o wa eleng h o 12.4 μm) o 6 eV (o wa eleng h o 0.2 μm), and
he da a was abula ed based on expe imen al wo k o ou esea ch g oups [48] and was also
published in [49]. Secondly, he unc ion used o modeling he op ical p ope ies o 11
me als was a lexible and con enien selec ion o simula ions and op imiza ions. Las ly, he
da a was alida ed o i s consis ency o he op ical cons an s based on calcula ions o a
elaxa ion ime [50]. The esul has shown ha i s elaxa ion ime was cons an in he ee
elec on egion while o he da a displayed an uns able end [50-52].
Fig. 1. Schema ic illus a ion o he double laye ed compound Ag g a ing (DLCG). Thei
geome ies a e de ined by he g a ing pe iod Λ, he g a ing hicknesses d1 and d2, and he
lamella wid hs 1Λ, 2Λ, and Λ ( 1 is a ied illing a io o SG, 2 and a e a ied and ixed
illing a ios o CG, espec i ely). The ans e se magne ic wa e (H) (pa allel o he g a ing
g oo es o y-axis) is inciden on he g a ing wi h a wa e ec o k and an angle θ
3. Resul s and discussion
To op imize a CG abso be , we i s simula ed a SG s uc u e comp ising an Ag g a ing on
op o an Ag subs a e wi h a ixed g a ing pe iod (Ʌ = 400 nm) and a ixed hickness (d1 =
200 nm) as a unc ion o wa eleng h λ and he illing a io 1. Then, we calcula ed he SG
s uc u e wi h he same d1 o 200 nm and he illing a io o be ound wi h a high abso p ance
( 1 = 0.95) as a unc ion o wa eleng h λ and g a ing pe iod Ʌ. Finally, we simula ed he SG
wi h he ixed pa ame e s including Ʌ = 400 nm and 1 = 0.95 as a unc ion o wa eleng h λ
and g a ing hickness d1. Resul s ha e shown ha he SG ea u ing he p ope y o a deep
g a ing wi h he illing a io o 0.95 exhibi s high abso p ance in a wa eleng h ange om 1.6
Vol. 27, No. 21 | 14 Oc 2019 | OPTICS EXPRESS 30184
o 1.8 µm when he pa ame e o Ʌ and d1 a e ixed. The esul was also ag eed wi h p e ious
s udy on deep me al SG s uc u es [22,23]. When he pe iod o he deep g a ing was a ied
om 200 nm o 800 nm, he abso p ance spec um shi ed om he wa eleng h o 2.1 µm o
1.5 µm. Simila ly, when he g a ing hickness was changed om 50 nm o 800 nm, he high
abso p ion was ob ained wi h di e en hickness d1. Fo example, a single- equency abso be
wi h a high abso p ance a a peak wa eleng h o 1.1 µm o 1.6 µm could be c ea ed wi h a
hickness o 400 nm o 600 nm, espec i ely.
Finally, om he ob ained esul s a single SG could no o e a dual bandwid h and
maximum abso p ion al hough i was able o o e a high abso p ion based on he
cha ac e is ics o a deep g a ing. Acco dingly, a single CG on op o an Ag subs a e
consis ing o wo lamellae wi h di e en illing a ios ( 2 and ), he g a ing pe iod o 400 nm,
and he g a ing hickness d2 o 200 nm was in es iga ed. In e es ingly, he maximum
abso p ance o he CG was achie ed in a wide ange o 2 om 0.05 up o 0.50. No e ha he
single CG g a ing o be simula ed in he p esen s udy includes wo g a ing pe iods wi h a
ixed lamella o 180 nm ( = 0.45) and ano he is a ied ( a ied 2) wi h a condi ion sa is ied
o be a deep g a ing. F om he op imized esul s o he SG and CG s uc u es, i can be
concluded ha he double laye ed compound g a ing made o a single SG and a single CG on
op o an Ag subs a e was sui ably selec ed o he design o dual bandwid h pe ec
abso be s.
Fig. 2. Abso p ance (α) con ou s o TM wa es a no mal incidence o he double laye ed
compound Ag g a ing (a) wi h he ixed pa ame e s including Λ = 400 nm, d1 = 200 nm, and 1
= 0.95 as a unc ion o wa eleng h λ and 2, (b) wi h he ixed pa ame e s includes d1 = 200
nm, d2 = 200 nm, 1 = 0.95, and 2 = 0.45 as a unc ion o wa eleng h λ and g a ing pe iod Λ,
(c) wi h he ixed pa ame e s includes Λ = 400 nm, d1 = 200 nm, 1 = 0.95, and 2 = 0.45 as a
unc ion o wa eleng h λ and g a ing hickness d2
Figu e 2(a) exhibi s he abso p ance o TM wa es a θ = 0° o he DLCG wi h he ixed
pa ame e s including Ʌ = 400 nm, d1 = d2 = 200 nm, and 1 = 0.95 as a unc ion o he
wa eleng h λ and he illing a io 2. I is no ed ha he pa ame e s such as Ʌ = 400 nm, d1 =
200 nm, and 1 = 0.95 o he SG a e ixed since he op imal abso p ance is ound o be
maximum as analyzed abo e. F om Fig. 2(a), i can be seen ha he no mal abso p ance o
he DLCG is ob ained wi h a maximum alue in a wide ange o he illing a io om 0.1 o
0.45; howe e , a 2 = 0.45 hey a e wo dis inc peaks appea ing a wa eleng hs o a ound
1.17 µm and 1.7 µm. The illing a io, 2 = 0.45, is he maximum alue in a ange o 0 and
0.45 o be op imized o he DLCG, and he DLCG becomes a double laye ed simple g a ing
(DLSG) s uc u e when 2 is g ea e han 0.45 ( he DLSG is no objec i e o his s udy).
Fo he pu pose o designing dual band pe ec abso be s, om he esul compu ed in Fig.
2(a) he DLCG wi h Λ = 400 nm, d1 = 200 nm, d2 = 200 nm, 1 = 0.95, and op imal 2 = 0.45
was selec ed o a de ailed in es iga ion since i exhibi ed dual band abso p ance. Figu e 2(b)
illus a es he abso p ance (α) con ou s o he DLCG o TM wa es a no mal incidence wi h
he ixed pa ame e s includes d1 = 200 nm, d2 = 200 nm, 1 = 0.95, and 2 = 0.45 as a
unc ion o wa eleng h λ and g a ing pe iod Λ. I can be seen ha when he g a ing pe iod
Vol. 27, No. 21 | 14 Oc 2019 | OPTICS EXPRESS 30185
inc eases om 200 nm o 800 nm, he dual abso p ance peak o he DLCG shi s o sho
wa eleng hs. Meanwhile, Fig. 2(c) shows he no mal abso p ance o he DLCG wi h he ixed
pa ame e s includes Λ = 400 nm, d1 = 200 nm, 1 = 0.95, and 2 = 0.45 as a unc ion o
wa eleng h λ and g a ing hickness d2. The ea u e o he abso p ance spec um shown in Fig.
2(c) has wo bands while he e is only one band o a SG s uc u e (no shown he e);
acco dingly, wi h di e en g a ing hickness he abso be -based he CG could display a dual
band abso p ance spec um in a sho and long wa eleng h ange. The e o e, he op imal
pa ame e s o he DLCG including Λ = 400 nm, d1 = d2 = 200 nm, 1 = 0.95, and 2 = 0.45
we e selec ed since he DLCG p o ided a dual band pe ec abso p ance wo king in he nea
IR egime.
Fig. 3. (a) Schema ic illus a ion o he designed DLCG s uc u e ea u ing geome ic
pa ame e s as same as hose in Fig. 1 wi h a g aphene o e lay; and (b) No mal abso p ance
spec um o he DLCG wi h and wi hou a g aphene o e lay
Figu e 3 displays he p oposed DLCG wi h he g a ing pe iod (Ʌ = 400 nm), he g a ing
hicknesses o he SG and CG laye s (d1 = d2 = 200 nm), and he illing a ios 1 = 0.95, and
2 = 0.45 wi h a g aphene o e lay ha ing a hickness o 0.3 nm. Figu e 3(b) illus a es he
abso p ance spec um o TM wa es a θ = 0° wi h wo esonances, MP1 a λMP1 = 1.73 μm
and MP2 a λMP2 = 1.09 μm co esponding he undamen al mode and he second ha monic o
magne ic pola i ons, espec i ely. The highe o de o MP is, he peak abso p ion inc eases
[19]. I is e ealed ha he abso p ance peaks a λMP2 = 1.09 µm and λMP1 = 1.73 µm in Fig.
3(b) a e enhanced up o a maximum alue o 1.0 when he DLCG is co e ed by a g aphene
shee . In e es ingly, abso p ance spec a o he DLCG o be simula ed wi h di e en g a ing
pe iods (e.g., Λ = 600 nm and 800 nm) and ixed o he g a ing pa ame e s showed ha hey
simila ly ea u e wo modes o MPs and hei spec al bandwid hs emain unchanged al hough
he peaks shi o sho e wa eleng hs ( he esul s we e no shown he e).
Figu e 4 shows he abso p ance con ou s o he DLCG and g aphene-co e ed DLCG
s uc u es as a unc ion o wa eleng h λ and angle o incidence θ. I can be seen om Figs.
4(a) and 4(b) ha he abso p ance a he sho -wa eleng h peaks (λMP2 = 1.09 μm) o he wo
g a ing s uc u es is ound o be app oxima ely maximum in a wide ange o inciden angles
om 0 o 60°. On he con a y, he abso p ance o he CG a he long-wa eleng h peak (λMP1
= 1.73 μm) shown in Fig. 4(a) is no high in a na ow ange o inciden angles while ha o
he g aphene-co e ed DLCG shown in Fig. 4(b) is ob ained o be nea uni y o 50° and
dec eases o 0.7 o 70°. Gene ally, wi h a g aphene o e lay, he abso p ance a dual peaks o
he DLCG inc eases o he maximum alue o 1.0 and is insensi i e o a wide ange o angles
o incidence.
Vol. 27, No. 21 | 14 Oc 2019 | OPTICS EXPRESS 30186
Fig. 4. Abso p ance con ou s o (a) he DLCG and (b) g aphene-co e ed DLCG as a unc ion
o he wa eleng h and angles o incidence
To manu ac u e he p oposed DLCG s uc u e wi h such geome ies, one could i s ly
ab ica e g aphene using chemical apo deposi ion on a coppe oil and secondly e ch he
deep ench (g oo e) g a ing s uc u es based on a c yogenic e ching me hod [53–55]. To be
de ailed, he ab ica ion p ocess s a s by pa e ing g a ing lines on a polyme esis laye on
an Ag subs a e using nanoimp in and hen using ch omium shadowing and eac i e ion
e ching (RIE) o e ch he esis laye o o m an e ch mask. Con inually, deep enches o he
g a ings a e c ea ed by he c yogenic RIE, and he mask ma e ials a e ianally emo ed by a
plasma cleaning p ocess. P e ious s udies ha e demons a ed ha his cos -e icien
manu ac u ing me hod was success ully implemen ed o c ea e deep enches wi h a deep
wid h o wall hickness a io (aspec a io) up o 40 [53] and a deep ench wid h o 20 nm
wi h an aspec a io o 8 [54].
Figu es 5(a)-( ) desc ibe he magne ic and elec ic ield dis ibu ions a he esonance
wa eleng hs o magne ic pola i ons (λMP2 = 1.09 μm, λMP1 = 1.73 μm a θ = 0°) o he DLCG
wi h and wi hou a g aphene o e lay. In Figs. 5(a), 5(b), 5(d), and 5(e), he colo con ou
ep esen s he magne ic ield and he a ows indica e no malized elec ic ields. Figu es 5(c)
and 5( ) show he no malized magni ude o elec ic ield o he DLCG a λMP1 = 1.73 μm and
θ = 0° while he inse igu es display he magni ied elec ic ield a he opening o he g a ing
enches. I is seen om Figs. 5(a), 5(b), 5(d), and 5(e) ha he s ong magne ic ield aps
inside he enches (g a ing g oo es) o bo h s uc u es wi h and wi hou g aphene o e lay;
howe e , he magne ic ield occupies in he longe ench s onge han ha in he sho
ench. In addi ion o ha , he magne ic ields a λMP2 = 1.09 μm apping in he ench much
mo e han ha a λMP1 = 1.73 μm; his esul s a highe abso p ance a he highe o de MP as
seen in Figs. 3 and 4.
As an illus a ion shown in Figs. 5(c) and 5( ), he elec ic ield simila ly aps inside he
enches o he bo h g a ing s uc u es. I can be seen ha he elec ic ield shown in Fig. 5(c)
aps mo e inside he ench o he DLCG wi hou a g aphene o e lay while ha o he DLCG
co e ed by a g aphene shee shown in Fig. 5( ) concen a es less. Howe e , aking a close
look a he g aphene o e lay on he g a ing opening as seen in he inse igu e o Fig. 5( ),
one can see he elec ic ield ocsila eing s onge a he in e ace. As a esul , his makes
g aphene abso bing mo e ene gy ha is also well-ag eed wi h demons a ions in he p e ious
s udies [22,39].
Vol. 27, No. 21 | 14 Oc 2019 | OPTICS EXPRESS 30187
Fig. 5. Elec omagne ic ields o DLCG s uc u es o TM wa es a no mal incidence: (a) and
(b) he DLCG wi h and w/o g aphene a he peak λMP2 = 1.09; (d) and (e) he DLCG wi h and
w/o a g aphene shee a he peak λMP1 = 1.73 μm; (c) and ( ) he colo indica es he no malized
magni ude o he elec ic ield o he DLCG wi h and w/o a g aphene shee a he esonance
wa eleng h λ1 = 1.73 μm. The colo in Figs. (a), (b), (d), and (e) show no malized magni ude
o he magne ic ield, while he a ows indica e he no malized elec ic ield. The inse igu es
in Figs. (c) and ( ) show he enhancemen o elec ic ields (blue spo s) a he opening o he
g a ing ench.
Gene ally, Figs. 5(a)-(e) e eal he magne ic pola i ons (MPs) o be exci ed in he DLCG
wi h and wi hou a g aphene laye . The MP is a s ong coupling be ween a magne ic
esonance inside g a ing s uc u es and ex e nal elec omagne ic wa es. As shown in hese
igu es, he ime- a ying magne ic ield pa allel o he y di ec ion gene a es a closed cu en
loop a ound he enches in he s uc u es whe e he s ong localized magne ic ield is c ea ed,
and i hen o ms he MP (i is known as Lenz’s law). In addi ion o ha , he e is no
occu ence o su ace plasmon pola i ons based on he elec omagne ic calcula ion shown in
he abo e igu es. The e o e, he enhancemen o abso p ance in he g aphene-co e ed DLCG
s uc u es was caused by he magne ic pola i on exci a ion wi h wo modes o esonances.
4. Conclusion
The manusc ip has p esen ed he simple design o he no el plasmonic s uc u e, namely he
g aphene-co e ed double laye ed compound Ag g a ing wo king as a dual band pe ec
abso be . I s abso p ance was ound o be 100% and i s dual band spec um was insensi i e o
a la ge ange o inciden angles om 0 o 70°. The physics behind he DLCG wi h he
g aphene o e lay was demons a ed due o he exci a ion o he magne ic pola i ons.
Fu he mo e, he p oposed s uc u e easible o be manu ac u ed p o ides emendous
applica ions o designing mul iple band pe ec IR abso be s based on g aphene-co e ed
compound me allic g a ings.
Vol. 27, No. 21 | 14 Oc 2019 | OPTICS EXPRESS 30188
Funding
RMSTC (CZ.1.05/2.1.00/19.0387).
Acknowledgmen s
The au ho s a e much g a e ul o he inancial suppo s unde he p ojec No.
CZ.1.05/2.1.00/19.0387 “De elopmen o esea ch and de elopmen basis o RMSTC” wi hin
he ame o he ope a ion p og am, Resea ch and De elopmen o Inno a ions, and he
S uc u al Funds and he s a e budge o he Czech Republic.
Re e ences
1. K. R. Ca chpole and A. Polman, “Plasmonic sola cells,” Op . Exp ess 16(26), 21793–21800 (2008).
2. J. N. Munday and H. A. A wa e , “La ge in eg a ed abso p ion enhancemen in plasmonic sola cells by
combining me allic g a ings and an i e lec ion coa ings,” Nano Le . 11(6), 2195–2201 (2011).
3. N. Nguyen-Huu, M. Cada, and J. Piš o a, “In es iga ion o op ical abso p ance o one-dimensionally pe iodic
silicon g a ings as sola abso be s o sola cells,” Op . Exp ess 22, A68–A79 (2014).
4. J. Hao, J. Wang, X. Liu, W. J. Padilla, L. Zhou, and M. Qiu, “High pe o mance op ical abso be based on a
plasmonic me ama e ial,” Appl. Phys. Le . 96(25), 251104 (2010).
5. Z. Yu, G. Ve onis, S. Fan, and M. L. B onge sma, “Design o midin a ed pho ode ec o s enhanced by su ace
plasmons on g a ing s uc u es,” Appl. Phys. Le . 89(15), 151116 (2006).
6. J. Rosenbe g, R. V. Shenoi, T. E. Vande elde, S. K ishna, and O. Pain e , “A mul ispec al and pola iza ion-
selec i e su ace-plasmon esonan midin a ed de ec o ,” Appl. Phys. Le . 95(16), 161101 (2009).
7. N. Liu, M. Mesch, T. Weiss, M. Hen schel, and H. Giessen, “In a ed pe ec abso be and i s applica ion as
plasmonic senso ,” Nano Le . 10(7), 2342–2348 (2010).
8. N. Nguyen-Huu, M. Cada, J. Piš o a, and K. Yasumo o, “Tunable op ical il e based on gold and sil e double-
sided g a ings and i s applica ion as plasmonic senso ,” J. Ligh wa e Technol. 32(21), 3477–3484 (2014).
9. Y. Zhao, S.-C. S. Lin, A. A. Nawaz, B. Ki aly, Q. Hao, Y. Liu, and T. J. Huang, “Beam bending ia plasmonic
lenses,” Op . Exp ess 18(22), 23458–23465 (2010).
10. M. Diem, T. Koschny, and C. M. Soukoulis, “Wide-angle pe ec abso be / he mal emi e in he e ahe z
egime,” Phys. Re . B Condens. Ma e Ma e . Phys. 79(3), 033101 (2009).
11. N. Nguyen-Huu, Y.-B. Chen, and Y.-L. Lo, “De elopmen o a pola iza ion-insensi i e he mopho o ol aic
emi e wi h a bina y g a ing,” Op . Exp ess 20(6), 5882–5890 (2012).
12. T.-J. Yen, W. J. Padilla, N. Fang, D. C. Vie , D. R. Smi h, J. B. Pend y, D. N. Baso , and X. Zhang, “Te ahe z
magne ic esponse om a i icial ma e ials,” Science 303(5663), 1494–1496 (2004).
13. J. Chen, W. Fan, P. Mao, C. Tang, Y. Liu, Y. Yu, and L. Zhang, “Tailo ing plasmon li e ime in suspended
nanoan enna a ays o high-pe o mance plasmon sensing,” Plasmonics 12(3), 529–534 (2017).
14. J. Chen, T. Zha, T. Zhang, C. Tang, Y. Yu, Y. Liu, and L. Zhang, “Enhanced magne ic ields a op ical
equency by di ac ion coupling o magne ic esonances in li ed me ama e ials,” J. Ligh wa e Technol. 35(1),
71–74 (2017).
15. J. Chen, T. Zhang, C. Tang, P. Mao, Y. Liu, Y. Yu, and Z. Liu, “Op ical magne ic ield enhancemen ia
coupling magne ic plasmons o op ical ca i y modes,” IEEE Pho onics Technol. Le . 28(14), 1529–1532 (2016).
16. J. Chen, C. Tang, P. Mao, C. Peng, D. Gao, Y. Yu, Q. Wang, and L. Zhang, “Su ace-plasmon-pola i ons-
assis ed enhanced magne ic esponse a op ical equencies in me ama e ials,” IEEE Pho onics J. 8(1), 1–7
(2016).
17. R. Feng, J. Qiu, Y. Cao, L. Liu, W. Ding, and L. Chen, “Wide-angle and pola iza ion independen pe ec
abso be based on one-dimensional ab ica ion- ole an s acked a ay,” Op . Exp ess 23(16), 21023–21031
(2015).
18. R. Feng, J. Qiu, L. Liu, W. Ding, and L. Chen, “Pa allel LC ci cui model o mul i-band abso p ion and
p elimina y design o adia i e cooling,” Op . Exp ess 22, A1713–A1724 (2014).
19. L. Wang and Z. Zhang, “Resonance ansmission o abso p ion in deep g a ings explained by magne ic
pola i ons,” Appl. Phys. Le . 95(11), 111904 (2009).
20. B. Zhao and Z. M. Zhang, “S udy o magne ic pola i ons in deep g a ings o he mal emission con ol,” J.
Quan . Spec osc. Radia . T ans . 135, 81–89 (2014).
21. B. Zhao and Z. M. Zhang, “S ong plasmonic coupling be ween g aphene ibbon a ay and me al g a ings,” ACS
Pho onics 2(11), 1611–1618 (2015).
22. B. Zhao, J. Zhao, and Z. Zhang, “Enhancemen o nea -in a ed abso p ion in g aphene wi h me al g a ings,”
Appl. Phys. Le . 105(3), 031905 (2014).
23. Q. Pan, J. Hong, G. Zhang, Y. Shuai, and H. Tan, “G aphene plasmonics o su ace enhancemen nea -in a ed
abso p i i y,” Op . Exp ess 25(14), 16400–16408 (2017).
24. Y. Q. Ye, Y. Jin, and S. He, “Omnidi ec ional, pola iza ion-insensi i e and b oadband hin abso be in he
e ahe z egime,” J. Op . Soc. Am. B 27(3), 498–504 (2010).
25. N. I. Landy, S. Sajuyigbe, J. J. Mock, D. R. Smi h, and W. J. Padilla, “Pe ec me ama e ial abso be ,” Phys.
Re . Le . 100(20), 207402 (2008).
Vol. 27, No. 21 | 14 Oc 2019 | OPTICS EXPRESS 30189
26. C.-M. Wang, Y.-C. Chang, M.-W. Tsai, Y.-H. Ye, C.-Y. Chen, Y.-W. Jiang, Y.-T. Chang, S.-C. Lee, and D. P.
Tsai, “Re lec ion and emission p ope ies o an in a ed emi e ,” Op . Exp ess 15(22), 14673–14678 (2007).
27. J. Wang, Y. Chen, J. Hao, M. Yan, and M. Qiu, “Shape-dependen abso p ion cha ac e is ics o h ee-laye ed
me ama e ial abso be s a nea -in a ed,” J. Appl. Phys. 109(7), 074510 (2011).
28. T. Maie and H. B ückl, “Wa eleng h- unable mic obolome e s wi h me ama e ial abso be s,” Op . Le . 34(19),
3012–3014 (2009).
29. Z. Song, M. Wei, Z. Wang, G. Cai, Y. Liu, and Y. Zhou, “Te ahe z abso be wi h econ igu able bandwid h
based on iso opic anadium dioxide me asu aces,” IEEE Pho onics J. 11(2), 1–7 (2019).
30. Z. Song, Z. Wang, and M. Wei, “B oadband unable abso be o e ahe z wa es based on iso opic silicon
me asu aces,” Ma e . Le . 234, 138–141 (2019).
31. M. Wei, Z. Song, Y. Deng, Y. Liu, and Q. Chen, “La ge-angle mid-in a ed abso p ion swi ch enabled by
pola iza ion-independen GST me asu aces,” Ma e . Le . 236, 350–353 (2019).
32. J. Chen, W. Fan, T. Zhang, C. Tang, X. Chen, J. Wu, D. Li, and Y. Yu, “Enginee ing he magne ic plasmon
esonances o me ama e ials o high-quali y sensing,” Op . Exp ess 25(4), 3675–3681 (2017).
33. T. Sang, J. Gao, X. Yin, H. Qi, L. Wang, and H. Jiao, “Angle-insensi i e b oadband abso p ion enhancemen o
g aphene using a mul i-g oo ed me asu ace,” Nanoscale Res. Le . 14(1), 105 (2019).
34. N. Zhang, P. Zhou, D. Cheng, X. Weng, J. Xie, and L. Deng, “Dual-band abso p ion o mid-in a ed
me ama e ial abso be based on dis inc dielec ic spacing laye s,” Op . Le . 38(7), 1125–1127 (2013).
35. B. Liu, C. Tang, J. Chen, Q. Wang, M. Pei, and H. Tang, “Dual-band ligh abso p ion enhancemen o
monolaye g aphene om su ace plasmon pola i ons and magne ic dipole esonances in me ama e ials,” Op .
Exp ess 25(10), 12061–12068 (2017).
36. H. Lee and J. Wu, “A wide-angle dual-band in a ed pe ec abso be based on me al–dielec ic–me al spli
squa e- ing and squa e a ay,” J. Phys. D Appl. Phys. 45(20), 205101 (2012).
37. J. Sun, L. Liu, G. Dong, and J. Zhou, “An ex emely b oad band me ama e ial abso be based on des uc i e
in e e ence,” Op . Exp ess 19(22), 21155–21162 (2011).
38. K. Chen, R. Ada o, and H. Al ug, “Dual-band pe ec abso be o mul ispec al plasmon-enhanced in a ed
spec oscopy,” ACS Nano 6(9), 7998–8006 (2012).
39. B. Zhao, J. Zhao, and Z. Zhang, “Resonance enhanced abso p ion in a g aphene monolaye using deep me al
g a ings,” J. Op . Soc. Am. B 32(6), 1176–1185 (2015).
40. N. Nguyen-Huu and Y.-L. Lo, “Tailo ing he op ical ansmission spec a o double-laye ed compound me allic
g a ings,” IEEE Pho onics J. 5(1), 2700108 (2013).
41. W.-C. Tan, J. R. Sambles, and T. P eis , “Double-pe iod ze o-o de me al g a ings as e ec i e selec i e
abso be s,” Phys. Re . B Condens. Ma e Ma e . Phys. 61(19), 13177–13182 (2000).
42. A. P. Hibbins, J. R. Sambles, and C. R. Law ence, “Exci a ion o ema kably nondispe si e su ace plasmons on
a nondi ac ing, dual-pi ch me al g a ing,” Appl. Phys. Le . 80(13), 2410–2412 (2002).
43. D. C. Skigin and R. A. Depine, “Di ac ion by dual-pe iod g a ings,” Appl. Op . 46(9), 1385–1391 (2007).
44. N. Nguyen-Huu, Y.-L. Lo, Y.-B. Chen, and T.-Y. Yang, “Realiza ion o in eg a ed pola ize and colo il e s
based on subwa eleng h me allic g a ings using a hyb id nume ical scheme,” Appl. Op . 50(4), 415–426 (2011).
45. A. D. Rakić, A. B. Dju išić, J. M. Elaza , and M. L. Majewski, “Op ical p ope ies o me allic ilms o e ical-
ca i y op oelec onic de ices,” Appl. Op . 37(22), 5271–5283 (1998).
46. A. Vakil and N. Enghe a, “T ans o ma ion op ics using g aphene,” Science 332(6035), 1291–1294 (2011).
47. L. Falko sky, “Op ical p ope ies o g aphene,” J. Phys.: Con . Se . 129, 012004 (2008).
48. D. W. Lynch and W. Hun e , “Commen s on he op ical cons an s o me als and an in oduc ion o he da a o
se e al me als,” in Handbook o Op ical Cons an s o Solids (Else ie , 1997), pp. 275–367.
49. E. D. Palik, Handbook o Op ical Cons an s o Solids (Academic P ess, 1998).
50. Y. Jiang, S. Pillai, and M. A. G een, “Re-e alua ion o li e a u e alues o sil e op ical cons an s,” Op . Exp ess
23(3), 2133–2144 (2015).
51. P. B. Johnson and R.-W. Ch is y, “Op ical cons an s o he noble me als,” Phys. Re . B 6(12), 4370–4379
(1972).
52. D. Nash and J. Sambles, “Su ace plasmon-pola i on s udy o he op ical dielec ic unc ion o sil e ,” J. Mod.
Op . 43, 81–91 (1996).
53. H. Miao, A. A. Gomella, N. Chedid, L. Chen, and H. Wen, “Fab ica ion o 200 nm pe iod ha d X- ay phase
g a ings,” Nano Le . 14(6), 3453–3458 (2014).
54. Y. Wu, D. Olynick, A. Goodyea , C. Pe oz, S. Dhuey, X. Liang, and S. Cab ini, “C yogenic e ching o nano-
scale silicon enches wi h esis masks,” Mic oelec on. Eng. 88(8), 2785–2789 (2011).
55. C. Welch, A. Goodyea , T. Wahlb ink, M. C. Lemme, and T. Mollenhaue , “Silicon e ch p ocess op ions o
mic o-and nano echnology using induc i ely coupled plasmas,” Mic oelec on. Eng. 83(4-9), 1170–1173 (2006).
Vol. 27, No. 21 | 14 Oc 2019 | OPTICS EXPRESS 30190