THEORETICAL AND APPLIED ELECTRICAL ENGINEERING VOLUME: 18 |NUMBER: 1 |2020 |MARCH
A Class o Di e en ia o -Based Mul i unc ion
Biquad Fil e s Using OTRAs
Nee a PANDEY1, Rajeshwa i PANDEY1, Rashika ANURAG2, Ri u VIJAY3
1Depa men o Elec onics and Communica ion Enginee ing, Delhi Technological Uni e si y,
Main Bawana Road, 110042 Delhi, India
2Depa men o Elec onics and Communica ion Enginee ing, JSS Academy o Technical Educa ion Noida,
C Block, Phase 2, Indus ial A ea, Sec o 62, 201301 Noida, India
3Depa men o Elec onics, Banas hali Uni e si y, Vanas hali Road, 304022 Banas hali, India
[email p o ec ed], ajeshw[email p o ec ed], aashik[email p o ec ed], i u [email protected]
DOI: 10.15598/aeee. 18i1.3363
Abs ac . This pape p esen s Signal Flow G aph
(SFG) app oach-based ealiza ion o Single Inpu Mul-
iple Ou pu (SIMO) il e opologies. A di e en ia-
o is placed as basic building block. A o al o six een
a ian s a e de i ed om he p oposed di e en ia o -
based SFG. The Ope a ional T ans-Resis ance Ampli-
ie (OTRA), an ac i e block ha ing low pa asi ics
a inpu e minals, is used o alida e he p oposed
me hodology. All he de i ed il e s uc u es use h ee
OTRAs, six esis o s and wo capaci o s. The il e
pe o mance pa ame e s can be adjus ed independen ly.
The unc ional e i ica ion o he p oposed me hod is
done ia SPICE simula ions using 0.18 µm CMOS
echnology pa ame e s om MOSIS.
Keywo ds
Fil e , OTRA, SIMO.
1. In oduc ion
The Con inuous-Time (CT) il e s a e widely used in
consume elec onics, ins umen a ion, mili a y o d-
nance, elecommunica ions and ada sys ems, e c.
The e o e, conside able esea ch e o s ha e been de-
o ed o de eloping CT il e s based on wide a ie y
o ac i e blocks. The bandwid h o adi ional ac-
i e blocks is limi ed by closed-loop ol age gain and
p esence o he pa asi ic elemen s in luences he pe -
o mance o il e . The ac i e block, OTRA [1], uses
cu en eedback echnique, which makes i s bandwid h
almos independen o he gain. Addi ionally, he pa -
asi ic impedances a inpu e minals a e low and ha e
negligible e ec on ci cui s. The e o e, OTRA-based
CT il e s ha e been in es iga ed in ecen pas [1],
[2], [3], [4], [5], [6], [7], [8], [9], [10], [11], [12], [13], [14],
[15], [16], [17], [18] and [19] and hey can be ca ego ized
as (i) single and (ii) mul iple OTRA-based s uc u es.
Though single OTRA-based il e s [2], [3], [4] and [5]
a e use ul when powe consump ion is impo an , hey
show la ge sensi i i y o componen a ia ion and a e
less e sa ile han hei mul iple OTRA-based coun-
e pa s [1], [6], [7], [8], [9], [10], [11], [12], [13], [14],
[15], [16], [17], [18] and [19]. The salien ea u es o he
a ailable mul iple OTRA-based CT il e s a e lis ed
below:
•A single esponse is a ailable in [1], [6], [7], [8],
[10], [16] and [17], whe eas [8], [9], [11], [12], [13],
[14] and [15] o e mul iple esponses.
•Single/Mul iple ou pu il e s [6], [7], [8] and [16]
may, howe e , gi e o he esponses by choosing
app op ia e inpu exci a ion e minal.
•Fil e s [1], [8], [10], [16] and [18] impose condi ion
on componen /swi ch selec ion o ob aining he
esponses.
The unde lying p inciple o hese il e s [1], [6], [10],
[11], [12], [13], [14] and [16] is connec ion o lossy and
lossless in eg a o . In he ecen pas , he esea che s
ha e de eloped ew di e en ia o -based signal p ocess-
ing and gene a ing ci cui s [7], [8], [9], [15], [20], [21],
[22], [23], [24], [25], [26], [27] and [28] inding appli-
ca ions in he a ea o con ol sys em and biomedical
ins umen a ion. Howe e , he a ea is no much ex-
plo ed, as e iden om he limi ed li e a u e a ail-
able. Conside ing his, di e en ia o -based SIMO il e
opologies designed using SFG-based app oach a e p o-
posed in his pape and OTRA is used o alida e i .
c
2020 ADVANCES IN ELECTRICAL AND ELECTRONIC ENGINEERING 31
THEORETICAL AND APPLIED ELECTRICAL ENGINEERING VOLUME: 18 |NUMBER: 1 |2020 |MARCH
I is pe inen o men ion he e ha SFG-based ap-
p oach, wi h in eg a o s, has been employed in [29],
[30], [31], [32] and [33].
The pape is a anged in i e sec ions. Sec ion 2.
includes he discussion on he p oposed SFG, ollowed
by a b ie e iew o OTRA and basic signal p ocess-
ing blocks designed using OTRA. The OTRA-based
SIMO il e opologies a e also included in he same
sec ion subsequen ly. The non-ideali y analysis is gi en
in Sec. 3. , ollowed by simula ion esul s in Sec. 4.
The pape is inally concluded in Sec. 5.
2. Ci cui Desc ip ion
2.1. The P oposed SFG
The p oposed di e en ia o -based SFG, which uses wo
di e en ia o s in o wa d pa h, is depic ed in Fig. 1.
The coe icien s ki(i∈ {1,2,3,4}) may assume alue
1and −1. Fou di e en SFGs can be gene a ed om
Fig. 1 by selec ing he alues o k1and k2 espec i ely
as (1,1),(1,−1),(−1,1) o (−1,−1) as depic ed in
Fig. 2. These SFGs ep esen ou di e en opologies
and a e e e ed espec i ely as opology 1, opology
2, opology 3 and opology 4. The alues o k3and k4
a e chosen so ha app op ia e ans e unc ions can
be ob ained.
Vin
k1
k4
k3
V3
V2
V1
k2-sτ1sτ2
Vo
Fig. 1: The p oposed di e en ia o -based SFG.
I may be no ed ha he SFG in Fig. 1 uses an in-
e ing di e en ia o , ollowed by a non-in e ing di -
e en ia o . Al e na e SFGs can be de i ed by placing
•a non-in e ing di e en ia o ollowed by an in-
e ing di e en ia o ,
• wo non-in e ing di e en ia o s, o
• wo in e ing di e en ia o s.
The esul ing SFGs a e depic ed in Fig. 3.
In each SFG in Fig. 3, k1and k2may u he be se-
lec ed as (1,1),(1,−1),(−1,1) o (−1,−1), hus p o-
iding a o al o six een SFGs, and a e shown in Fig. 4.
Vin
k
+1
+1
V3
V2
V1
+1 -sτ1sτ2
Vo
(a)
Vin
k
-1
-1
V3
V2
V1
-1 -sτ1sτ2
Vo
(b)
Vin
-k
+1
+1
V3
V2
V1
+1 -sτ1sτ2
Vo
(c)
Vin
-k
-1
-1
V3
V2
V1
-1 -sτ1sτ2
Vo
(d)
Fig. 2: SFGs gene a ed om Fig. 1 o k1and k2as (a) opol-
ogy 1, (b) opology 2, (c) opology 3, (d) opology 4.
2.2. The OTRA
The OTRA is an ac i e block wi h wo low-impedance
inpu e minals and a low-impedance ou pu e minal.
The ci cui symbol o OTRA is gi en in Fig. 5 and i s
e minals a e cha ac e ized by ma ix o Eq. (1):


Vp
Vn
Vo

=

0 0 0
0 0 0
Rm−Rm0

·

Ip
In
I0

,(1)
whe e Rmis ans- esis ance gain o OTRA. The alue
o Rmis ideally in ini y; he e o e, OTRA is gene ally
used in nega i e eedback con igu a ion.
c
2020 ADVANCES IN ELECTRICAL AND ELECTRONIC ENGINEERING 32
THEORETICAL AND APPLIED ELECTRICAL ENGINEERING VOLUME: 18 |NUMBER: 1 |2020 |MARCH
Vin
k1k
k4
k3
V3
V2
V1
k2sτ1-sτ2
Vo
(a)
Vin
k1k
k4
k3
V3
V2
V1
k2sτ1sτ2
Vo
(b)
Vin
k1k
k4
k3
V3
V2
V1
k2-sτ1-sτ2
Vo
(c)
Fig. 3: Al e na e SFGs.
Vin
k
-1
+1
V3
V2
V1
+1 sτ1-sτ2
Vo
(a) Topology 5: k1= 1,k2= 1.
Vin
k
+1
-1
V3
V2
V1
-1 sτ1-sτ2
Vo
(b) Topology 6: k1= 1,k2=−1.
Vin
-k
-1
+1
V3
V2
V1
+1 sτ1-sτ2
Vo
(c) Topology 7: k1= 1,k2= 1.
Vin
-k
+1
-1
V3
V2
V1
-1 sτ1-sτ2
Vo
(d) Topology 8: k1= 1,k2=−1.
Vin
k
-1
-1
V3
V2
V1
+1 sτ1-sτ2
Vo
(e) Topology 9: k1= 1,k2= 1.
Vin
k
+1
+1
V3
V2
V1
-1 sτ1-sτ2
Vo
( ) Topology 10: k1= 1,k2=−1.
Vin
-k
-1
-1
V3
V2
V1
+1 sτ1sτ2
Vo
(g) Topology 11: k1=−1,k2= 1.
Vin
-k
+1
+1
V3
V2
V1
-1 sτ1sτ2
Vo
(h) Topology 12: k1= 1,k2=−1.
Vin
k
+1
-1
V3
V2
V1
+1 -sτ1-sτ2
Vo
(i) Topology 13: k1= 1,k2= 1.
Vin
k
+1
+1
V3
V2
V1
-1 -sτ1-sτ2
Vo
(j) Topology 14: k1= 1,k2=−1.
Vin
-k
+1
-1
V3
V2
V1
+1 -sτ1-sτ2
Vo
(k) Topology 15: k1=−1,k2= 1.
Vin
-k
+1
+1
V3
V2
V1
-1 -sτ1-sτ2
Vo
(l) Topology 16: k1=−1,k2=−1.
Fig. 4: The SFG s uc u es.
Vp
Vn
Ip
In
-
+
RmVo
Fig. 5: The OTRA block.
A close inspec ion o SFGs in Fig. 2 and Fig. 4
e eals ha he ci cui ealiza ion would equi e
ol age addi ion-sub ac ion ollowed by ampli ie
(in e ing / non-in e ing), and di e en ia o s (in e -
ing / non-in e ing).
The OTRA-based ealiza ion o ol age addi-
ion/sub ac ion is shown in Fig. 6. I uses i e esis o s
and one OTRA. By equa ing he cu en s o in e ing
and non-in e ing e minals, he ou pu o he ci cui
om Fig. 6 is ob ained as:
Vo=R5V1
R1
+V2
R2
−V3
R3
−V4
R4.(2)
Exchanging (Vi, Ri), whe e i∈ {1,2}wi h (Vj, Rj),
whe e j∈ {3,4}in Fig. 6 yields he ollowing ela ion:
Vo=−R5V1
R1
+V2
R2
−V3
R3
−V4
R4.(3)
I may be no ed ha Eq. (3) is in e ing o m o
Eq. (2).
c
2020 ADVANCES IN ELECTRICAL AND ELECTRONIC ENGINEERING 33
THEORETICAL AND APPLIED ELECTRICAL ENGINEERING VOLUME: 18 |NUMBER: 1 |2020 |MARCH
Rm
Vo
R5
V1
V2
V3
V4
R1
R2
R3
R4
Fig. 6: OTRA-based ealiza ion o ol age addi-
ion/sub ac ion.
By choosing he alues o esis ances app op ia ely,
he desi ed addi ion-sub ac ion can be pe o med.
Equa ion (2) p o ides non-in e ing ou pu , whe eas
Eq. (3) gi es an in e ing ou pu .
The OTRA-based ci cui s o in e ing and non-
in e ing di e en ia o s a e gi en in Fig. 7 and hei
espec i e ou pu s a e gi en by:
Vo=−sCRVin,(4)
Vo=−sCRVin.(5)
-
+
C
Rm
R
Vo
Vin
(a)
-
+
Rm
R
C
Vo
Vin
(b)
Fig. 7: OTRA-based ealiza ion o (a) in e ing and (b) non-
in e ing di e en ia o s.
2.3. OTRA-Based Realiza ion o
SFGs
The OTRA-based ealiza ion o SFGs can be ob ained
by using he basic blocks om Fig. 6 and Fig. 7.
The co esponding ci cui ealiza ions o SFGs om
Fig. 2(a), Fig. 2(b), Fig. 2(c) and Fig. 2(d) a e de-
pic ed espec i ely in Fig. 8(a), Fig. 8(b), Fig. 8(c)
and Fig. 8(d). I may be no ed ha he ealiza ions
om Fig. 8(a) and Fig. 8(b) a e same as hose gi en in
Fig. 8(c) and Fig. 8(d) espec i ely, since hei co e-
sponding k1k2p oduc e ms a e he same.
-
+
-
+
-
+
Rm
V3
R1
R4
R5
R2
R3
C2
C1
V2
V1
Vin
R3/k
Rm
Rm
(a)
-
+
-
+
-
+
Rm
V3
R1
R4
R5
R2
R3
C2
C1
V2
V1
Vin
R3/k
Rm
Rm
(b)
-
+
-
+
-
+
Rm
V3
R1
R4
R5
R2
R3
C2
C1
V2
V1
Vin
R3/k
Rm
Rm
(c)
-
+
-
+
-
+
Rm
V3
R1
R4
R5
R2
R3
C2
C1
V2
V1
Vin
R3/k
Rm
Rm
(d)
Fig. 8: OTRA-based ealiza ion o SFGs om Fig. 2.
The ans e unc ions o he opology in Fig. 8(a)
a e ob ained as:
V1
Vin
=k
D(s),
V2
Vin
=−k(sR2C2)
D(s),
V3
Vin
=−ks2R1R2C1C2
D(s),
(6)
whe e
D(s) = 1 + sR2R3C2
R5
+s2R1R2R3C1C2
R4
.(7)
c
2020 ADVANCES IN ELECTRICAL AND ELECTRONIC ENGINEERING 34
THEORETICAL AND APPLIED ELECTRICAL ENGINEERING VOLUME: 18 |NUMBER: 1 |2020 |MARCH
The ans e unc ions o he opology in Fig. 8(b) a e
compu ed as:
V1
Vin
=−k
D(s),
V2
Vin
=k(sR2C2)
D(s),
V3
Vin
=ks2R1R2C1C2
D(s).
(8)
I may be no ed ha V1,V2and V3 espec i ely ep-
esen low pass, band pass and high pass esponses. All
he ans e unc ions a di e en nodes ep esen ed by
Eq. (6) and Eq. (8) a e cha ac e ized by ollowing pole
equency (ω0), bandwid h (ω0
Q) and quali y ac o (Q):
ω0=R4
R1R2R3C1C2
1
2,(9)
ω0
Q=R4
R1R5C5
,(10)
Q=R5R1C1
R2R3R4C2
1
2.(11)
I is clea om Eq. (9), Eq. (10) and Eq. (11) ha
bo h bandwid h and quali y ac o can be adjus ed in-
dependen ly by a ying R5wi hou modi ying he pole
equency. The pole equency may be a ied by chang-
ing Riand Ci(i= 1,2) and quali y ac o may be kep
cons an by assuming R3=R4=R5and R1
R2=C2
C1.
Fu he , he gain o he il e esponses can be changed
by a ying he alue o k.
The OTRA-based ealiza ions o he SFGs lis ed in
Fig. 4 a e also ob ained and omi ed o he sake o
b e i y. The ans e unc ions a e simila o he one
gi en in Eq. (6), Eq. (7) and Eq. (8).
3. The Non-Ideali y Analysis
The esponse o he il e may de ia e due o non-
ideali y o OTRA. Ideally, he ans- esis ance gain Rm
is assumed o app oach in ini y. Howe e , in p ac ice,
Rmis a equency-dependen ini e alue. Conside ing
a single-pole model o ans- esis ance gain, Rm(s)can
be exp essed as:
Rm(s) = R0
1 + s
ω
,(12)
whe e R0is low- equency ans- esis ance gain. Fo
high- equency applica ions, he ans- esis ance gain
Rm(s)is app oxima ed as:
Rm(s)≈1
sCp
,(13)
whe e
Cp=1
R0ω0
.(14)
Taking his e ec in o accoun , he ans e unc ions
in Fig. 8(a) in p esence o ini e ansimpedance a e
compu ed as:
V1
Vin n
=kn
Dn(s),
V2
Vin n
=−kn(sR2C2)
Dn(s) (1 + sR2Cp2),
V3
Vin n
=−kns2R1R2C1C2
Dn(s) (1 + sR2Cp2) (1 + sR1Cp3),
(15)
whe e
Dn(s) = (1 + sR3Cp1) + sR2R3C2
R5(1 + sR2Cp2)+
+s2R1R2R3C1C2
R4(1 + sR1Cp3) (1 + sR2Cp2).
(16)
I is clea om Eq. (15) and Eq. (16) ha ans e unc-
ions modi y in p esence o non-ideali y. These equa-
ions educe o Eq. (6) and Eq. (7) by choosing he
ope a ing equency below min 1
R3Cp1,1
R2Cp2,1
R1Cp1.
4. Simula ion Resul s
To e i y he p oposed scheme, he unc ionali y o he
il e om Fig. 8(a) is es ed h ough SPICE simu-
la ions using CMOS OTRA a chi ec u e o [34] and
0.18 µm CMOS p ocess pa ame e s p o ided by MO-
SIS (AGILENT). Supply ol ages ±1.5V a e aken.
The simula ion is pe o med o pole equency o
159 kHz and uni y quali y ac o . All he esis ances
a e aken as 10 kΩand capaci o is aken as 100 pF.
The simula ed equency esponse o low pass, band
pass and high pass o he ci cui om Fig. 8(a) a e de-
pic ed in Fig. 9. The o al powe consump ion is ound
o be 6mW.
The o he se o simula ions is ca ied ou o show
uning o band pass il e cen e equency and gain.
The cen e equency is a ied by changing R1and R2
simul aneously om 5kΩ o 20 kΩin s ep o 5kΩwhile
keeping all o he esis ances and capaci ances a 10 kΩ
and 100 pF espec i ely. This se ing leads o cons an
Q alue. Figu e 11 shows he simula ed band pass
esponse o a ia ion in cen e equency and Qwi h
change in esis ance. I may be no ed ha Q a ies
sligh ly om uni y alue, which may be a ibu ed o
non-ideali ies o OTRA.
Fo a ia ion o band pass esponse gain while keep-
ing cen e equency cons an , all esis ances excep he
one connec ed o inpu e minal and capaci ances a e
c
2020 ADVANCES IN ELECTRICAL AND ELECTRONIC ENGINEERING 35

THEORETICAL AND APPLIED ELECTRICAL ENGINEERING VOLUME: 18 |NUMBER: 1 |2020 |MARCH
1k 10k 100k 1M 10M
1
2
Gain (-)
F equency (Hz)
Fig. 9: Simula ed low pass, band pass and high pass esponses
o he ci cui om Fig. 8(a).
0.0 0.2 0.4 0.6 0.8 1.0
-100
-50
0
50
100
inpu
ou pu
Time (ms)
Vol age (mV)
Fig. 10: Time domain wa e o m o low pass esponse.
chosen as 10 kΩand 100 pF, espec i ely. The alues
o k= 1,2and 4a e aken o ob ain gain o 1,2and
4, espec i ely. The simula ed esponse is depic ed in
Fig. 12, which ag ees wi h heo e ical p edic ions.
The SPICE simula ions a e also pe o med o ob-
se e he ime domain beha io . All esis ances and
capaci ances a e kep a 10 kΩand 100 pF, espec-
i ely. A 5kHz sinusoidal inpu o 50 mV ampli ude is
applied o he il e and he low pass ansien esponse
is depic ed in Fig. 10. To al ha monic dis o ion is also
measu ed by changing inpu sinusoid ampli ude and i s
alue was ound o be wi hin 3 % ill 150 mV ampli-
ude. Ano he simula ion is done by applying h ee
sinusoids ha ing equencies o 10 kHz, 100 kHz and
1MHz, espec i ely. Figu e 13 shows he inpu and
ou pu wa e o ms and co esponding equency spec-
ums. I is clea ha he sinusoid ha ing 1MHz e-
quency is signi ican ly a enua ed.
Mon e Ca lo simula ions a e also done o check o-
bus ness o he p oposed ci cui s by conside ing Gaus-
sian dis ibu ion o i y uns wi h 5% a ia ions in
all passi e componen s. Fo b e i y, he his og am o
ci cui om Fig. 8(a) a LPF node ou pu is depic ed
1k 10k 100k 1M 10M
1
2
F equency (Hz)
Gain (-)
(a)
5 10 15 20
0.0
200.0k
400.0k
Cen e equency (kHz)
Resis ance (kΩ)
(b)
5 10 15 20
0.5
1.0
1.5
Resis ance (kΩ)
Quali y ac o (-)
(c)
Fig. 11: Simula ed (a) band pass equency esponse, (b) cen e
equency and (c) Q a ia ion.
in Fig. 14, i implies he ci cui is well ope a ed wi hin
he heo e ical equency.
The pe o mance pa ame e s ela ed o powe con-
sump ion, THD and ou pu noise a e p esen ed in [11],
[12], [13] and [14]. The same is placed in Tab. 1. The
highe powe consump ion o he p oposed opology in
c
2020 ADVANCES IN ELECTRICAL AND ELECTRONIC ENGINEERING 36
THEORETICAL AND APPLIED ELECTRICAL ENGINEERING VOLUME: 18 |NUMBER: 1 |2020 |MARCH
1k 10k 100k 1M 10M
0
2
4
F equency (Hz)
Gain (-)
(a)
2.5 5.0 7.5 10.0
0
1
2
Quali y ac o (-)
Resis ance (kΩ)
(b)
2.5 5.0 7.5 10.0
0
2
4
Resis ance (kΩ)
Gain (-)
(c)
2.5 5.0 7.5 10.0
150.00k
175.00k
200.00k
Cen e equency (kHz)
Resis ance (kΩ)
(d)
Fig. 12: Simula ed (a) equency band pass esponse, (b) Q a ia ion, (c) gain a ia ion and (d) cen e equency a ia ion.
0 100 200 300
-200
0
200
Ou pu Vol age (mV)
0 100 200 300
-200
0
200
Inpu Vol age (mV)
Time (μs)
(a)
0 1 2 3 4 5
0
25
50
F equency (MHz)
Inpu Vol age (mV)
0 1 2 3 4 5
0
25
50
Ou pu Vol age (mV)
(b)
Fig. 13: Simula ed ansien low pass esponse (a) inpu and ou pu wa e o ms and i s (b) equency spec um.
c
2020 ADVANCES IN ELECTRICAL AND ELECTRONIC ENGINEERING 37
THEORETICAL AND APPLIED ELECTRICAL ENGINEERING VOLUME: 18 |NUMBER: 1 |2020 |MARCH
Tab. 1: Summa y o pe o mance pa ame e s.
Re . OTRA implemen a ion Powe consump ion
(%)
THD
(%)
Ou pu noise
(µV·Hz−
1
2)
[11] CMOS based 4.04 1.7–
[12] CFOA based 421 –4
[13] CMOS based 2.58 5.7 0.722
[14] CMOS based 1.09 6.74 0.316
P oposed CMOS based 6 3 0.140
120k 140k 160k 180k
0
5
10
15
20
F equency (Hz)
Pe cen age samples (%)
Fig. 14: Mon e Ca lo simula ion esul s.
compa ison wi h o he CMOS-based OTRA implemen-
a ions may be obse ed. Howe e , he ou pu noise o
he p oposed opology is lowes .
5. Conclusion
An al e na e ealiza ion o Single Inpu Mul iple Ou -
pu (SIMO) il e opologies has been p esen ed in
his con ibu ion whe ein di e en ia o is used as ba-
sic building block. An SFG is p oposed o his pu -
pose, which can u he be used o de i e six een SFGs
h ough p ope selec ion o in e ing and non-in e ing
di e en ia o s placed in loop; and hei addi ion. The
ac i e block OTRA is used o e i y he concep . All
he ealiza ions use h ee OTRAs, six esis o s and
wo capaci o s. The bandwid h and quali y ac o o
hese con igu a ions can be adjus ed independen ly o
he pole equency. The unc ional e i ica ion o he
p oposed me hod is done h ough SPICE simula ions
using 0.18 µm CMOS echnology pa ame e s om MO-
SIS.
Re e ences
[1] SALAMA, K. N. and A. M. SOLIMAN. Ac-
i e RC Applica ions o he Ope a ional
T ans esis ance Ampli ie . F equenz. 2000,
ol. 54, iss. 7–8, pp. 171–176. ISSN 2191-6349.
DOI: 10.1515/FREQ.2000.54.7-8.171.
[2] GOKCEN, A. and U. CAM. MOS-C single am-
pli ie biquads using he ope a ional ans e-
sis ance ampli ie . AEU - In e na ional Jou -
nal o Elec onics and Communica ions. 2009,
ol. 63, iss. 8, pp. 660–664. ISSN 1434-8411.
DOI: 10.1016/j.aeue.2008.05.008.
[3] CAKIR, C., U. CAM and O. CICEKOGLU.
No el allpass il e con igu a ion employing sin-
gle OTRA. IEEE T ansac ions on Ci cui s and
Sys ems II: Exp ess B ie s. 2005, ol. 52, iss. 3,
pp. 122–125. ISSN 1558-3791. DOI: 10.1109/TC-
SII.2004.842055.
[4] KILINC, S. and U. CAM. Cascadable all-
pass and no ch il e s employing single
ope a ional ans esis ance ampli ie . Com-
pu e s &Elec ical Enginee ing. 2005,
ol. 31, iss. 6, pp. 391–401. ISSN 0045-7906.
DOI: 10.1016/j.compeleceng.2005.06.001.
[5] KILINC, S., A. U. KESKIN and U. CAM.
Cascadable Vol age-Mode Mul i unc ion Bi-
quad Employing Single OTRA. F equenz. 2007,
ol. 61, iss. 3–4, pp. 84–86. ISSN 2191-6349.
DOI: 10.1515/FREQ.2007.61.3-4.84.
[6] ANURAG, R., N. PANDEY, R. CHANDRA
and R. PANDEY. Vol age Mode Second O de
No ch/All - Pass Fil e Realiza ion Using OTRA.
i-Manage ’s Jou nal on Elec onics Enginee ing.
2015, ol. 6, iss. 2, pp. 22–28. ISSN 2229-7286.
DOI: 10.26634/jele.6.2.3763.
[7] CHEN, J., H. TSAO and S. LIU. Vol age-mode
MOSFET-C il e s using ope a ional ans esis-
ance ampli ie s (OTRAs) wi h educed pa a-
si ic capaci ance e ec . IEE P oceedings - Ci -
cui s, De ices and Sys ems. 2001, ol. 148, iss. 5,
pp. 242–249. ISSN 1359-7000. DOI: 10.1049/ip-
cds:20010523.
[8] CHANG, C.-M., Y.-J. KO, Z.-Y. GUO,
C.-L. HOU and J.-W. HORNG. Gene a ion o
Vol age-Mode OTRA-R/MOS-C LP, BP, HP, and
BR Biquad Fil e . In: 10 h WSEAS In e na ional
c
2020 ADVANCES IN ELECTRICAL AND ELECTRONIC ENGINEERING 38
THEORETICAL AND APPLIED ELECTRICAL ENGINEERING VOLUME: 18 |NUMBER: 1 |2020 |MARCH
Con e ence on Ins umen a ion, Measu emen ,
Ci cui s and Sys ems. Venice: WSEAS, 2011,
pp. 28–34. ISBN 978-960-474-282-0.
[9] CHANG, C.-M., Y.-T. LIN, C.-K. HSU,
C.-L. HOU and J.-W. HORNG. Gene a ion
o ol age-Mode OTRA-based mul i unc ion
biquad il e . In: 10 h WSEAS In e na ional
Con e ence on Ins umen a ion, Measu emen ,
Ci cui s and Sys ems. Venice: WSEAS, 2011,
pp. 21–27. ISBN 978-960-474-282-0.
[10] GOKCEN, A., S. KILINC and U. CAM. Fully
in eg a ed uni e sal biquads using ope a ional-
ans esis ance ampli ie s wi h MOS-C ealiza-
ion. Tu kish Jou nal o Elec ical Enginee ing &
Compu e Sciences. 2011, ol. 19, no. 3, pp. 363–
372. ISSN 1303-6203. DOI: 10.3906/elk-1002-416.
[11] PANDEY, R., N. PANDEY, S. K. PAUL,
A. SINGH, B. SRIRAM and K. TRIVEDI. Vol -
age Mode OTRA MOS-C Single Inpu Mul i
Ou pu Biquad a ic Uni e sal Fil e . Ad ances
in Elec ical and Elec onics Enginee ing. 2012,
ol. 10, iss. 5, pp. 337–344. ISSN 1804-3119.
DOI: 10.15598/aeee. 10i5.678.
[12] SOLIMAN, A. M. and A. H. MADIAN.
MOS-C KHN Fil e Using Vol age OP
AMP, CFOA, OTRA and DCVC. Jou nal
o Ci cui s, Sys ems and Compu e s. 2009,
ol. 18, iss. 4, pp. 733–769. ISSN 1793-6454.
DOI: 10.1142/S021812660900523X.
[13] SOLIMAN, A. M. and A. H. MADIAN.
MOS-C Tow-Thomas Fil e Using Vol age
OP AMP, Cu en Feedback OP AMP and
Ope a ional T ans esis ance Ampli ie . Jou nal
o Ci cui s, Sys ems and Compu e s. 2009,
ol. 18, iss. 1, pp. 151–179. ISSN 1793-6454.
DOI: 10.1142/S0218126609004995.
[14] SOLIMAN, A. M. His o y and P og ess o
he Tow–Thomas Biquad a ic Fil e Pa II:
OTRA, CCII, and DVCC Realiza ions. Jou -
nal o Ci cui s, Sys ems and Compu e s. 2008,
ol. 17, iss. 5, pp. 797–826. ISSN 1793-6454.
DOI: 10.1142/S0218126608004691.
[15] DABAS, A. and N. ARORA. Tunable il e s
using ope a ional ans esis ance ampli ie s. In-
e na ional Jou nal o Elec ical and Elec onics
Enginee ing. 2014, ol. 4, iss. 4, pp. 103–112.
ISSN 2348-8379.
[16] MULLICK, R., N. PANDEY and R. PANDEY.
Mul i Inpu Single Ou pu Biquad a ic Uni e sal
Fil e using OTRA. i-Manage ’s Jou nal on Ci -
cui s and Sys ems. 2015, ol. 3, iss. 3, pp. 30–37.
ISSN 2322-035X. DOI: 10.26634/jci .3.3.4783.
[17] SENANI, R., A. K. SINGH, A. GUPTA and
D. R. BHASKAR. Simple Simula ed Induc o ,
Low-Pass/Band-Pass Fil e and Sinusoidal Os-
cilla o Using OTRA. Ci cui s and Sys ems.
2016, ol. 7, no. 3, pp. 83–99. ISSN 2153-1293.
DOI: 10.4236/cs.2016.73009.
[18] CHEN, J.-J., H.-W. TSAO, S.-I. LIU and
W. CHIU. Pa asi ic-capaci ance-insensi i e
cu en -mode il e s using ope a ional ans e-
sis ance ampli ie . IEE P oceedings - Ci cui s,
De ices and Sys ems. 1995, ol. 142, iss. 3,
pp. 186–192. ISSN 1350-2409. DOI: 10.1049/ip-
cds:19951950.
[19] SINGH, A. K., R. SENANI and A. GUPTA.
OTRA, i s implemen a ions and applica-
ions: a s a e-o - he-a e iew. Analog In e-
g a ed Ci cui s and Signal P ocessing. 2018,
ol. 97, iss. 2, pp. 281–311. ISSN 1573-1979.
DOI: 10.1007/s10470-018-1311-5.
[20] D’AZZO, J. J. and C. H. HOUPPIS. Linea Con-
ol Sys em: Analysis and Design. 4 h ed. New
Yo k: McG aw-Hill, 1995. ISBN 0-07-113295-3.
[21] KUHN, F. T. and P. A. VAN HALDEREN.
Design o an ac i e-di e en ia o -based capaci-
ance ansduce o elec ical capaci ance o-
mog aphy. Measu emen Science and Technology.
1997, ol. 8, no. 8, pp. 947–950. ISSN 1361-6501.
DOI: 10.1088/0957-0233/8/8/020.
[22] PANDEY, N. and R. PANDEY. App oach o
hi d o de quad a u e oscilla o ealiza ion. IET
Ci cui s, De ices &Sys ems. 2015, ol. 9, iss. 3,
pp. 161–171. ISSN 1751-858X. DOI: 10.1049/ie -
cds.2014.0170.
[23] LAWANWISUT, S. and M. SIRIPRUCHYANUN.
High Ou pu -impedance Cu en -mode Thi d-
O de Quad a u e Oscilla o Based on CCCC-
TAs. In: IEEE Region 10 In e na ional Con e -
ence (TENCON). Singapo e: IEEE, 2009, pp. 1–
4. ISBN 978-1-4244-4546-2. DOI: 10.1109/TEN-
CON.2009.5395961.
[24] WU, C.-Y., T.-C. YU and S.-S. CHANG.
New Monoli hic Swi ched-Capaci o Di e en ia-
o s wi h Good Noise Rejec ion. IEEE Jou nal o
Solid-S a e Ci cui s. 1989, ol. 24, iss. 1, pp. 177–
180. ISSN 1558-173X. DOI: 10.1109/4.16318.
[25] ALDEA, C., S. CELMA and A. OTIN. Low-
Vol age Di e en ia o o VHF Fil e ing. Ana-
log In eg a ed Ci cui s Signal P ocess. 2002,
ol. 33, iss. 2, pp. 107–116. ISSN 1573-1979.
DOI: 10.1023/A:1021207813469.
c
2020 ADVANCES IN ELECTRICAL AND ELECTRONIC ENGINEERING 39