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The response of polarization maintaining fibers upon temperature field disturbance

Abstract

The paper deals with the response of polarization maintaining (PM) fibers upon the variation of the temperature field, on condition both polarization axes are excited. Proper use can be applied in the area of optical fiber thermal field disturbance sensor. For a description of polarization properties the coherent Jones and Muller matrices were used. The Poincare sphere was applied to depict the development of the output of the polarization state of PM fibers for wavelengths 633 nm, 1310 nm and 1550 nm were arranged in a proposed sensor setup and were studied in the laboratory. A wide file of results containing dependencies of phase shift variations upon different configurations of measured PM fiber was obtained. The thermal field disturbance of the PM fiber was applied by an object with defined proportions and a defined range of temperatures. Dependencies of phase shift upon the object´s temperature, its distance from the fiber and exposed length of PM fiber were measured.

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The response of polarization maintaining fibers upon temperature field disturbance

Author: Dvořák, Filip
Publisher: Vysoká škola báňská - Technická univerzita Ostrava
Year: 2014
DOI: 10.15598/aeee.v12i2.1084
Source: https://dspace.vsb.cz/bitstreams/50747b16-5c8f-4ad4-a0bc-be17d3d53518/download
OPTICS AND OPTOELECTRONICS VOLUME: 12 |NUMBER: 2 |2014 |JUNE
The Response o Pola iza ion Main aining Fibe s
upon Tempe a u e Field Dis u bance
Filip DVORAK1, Jan MASCHKE2, Ces mi VLCEK2
1Depa men o ada echnology, Facul y o Mili a y Technology, Uni e si y o De ence, Kounico a 65,
B no, 602 00, Czech Republic
2Depa men o elec ical enginee ing, Facul y o Mili a y Technology, Uni e si y o De ence, Kounico a 65,
B no, 602 00, Czech Republic
ilip.d [email p o ec ed], jan.maschk[email p o ec ed], [email p o ec ed]
Abs ac . The pape deals wi h he esponse o po-
la iza ion main aining (PM) ibe s upon he a ia ion
o he empe a u e ield, on condi ion bo h pola iza-
ion axes a e exci ed. P ope use can be applied in
he a ea o op ical ibe he mal ield dis u bance sen-
so . Fo a desc ip ion o pola iza ion p ope ies he
cohe en Jones and Mulle ma ices we e used. The
Poinca e sphe e was applied o depic he de elopmen
o he ou pu o he pola iza ion s a e o PM ibe s o
wa eleng hs 633 nm, 1310 nm and 1550 nm we e a -
anged in a p oposed senso se up and we e s udied in
he labo a o y. A wide ile o esul s con aining depen-
dencies o phase shi a ia ions upon di e en con ig-
u a ions o measu ed PM ibe was ob ained. The he -
mal ield dis u bance o he PM ibe was applied by
an objec wi h de ined p opo ions and a de ined ange
o empe a u es. Dependencies o phase shi upon he
objec ’s empe a u e, i s dis ance om he ibe and ex-
posed leng h o PM ibe we e measu ed.
Keywo ds
Bea leng h, cohe ency ma ix, ibe esponse,
Poinca e sphe e, senso , s a e o pola iza ion.
1. In oduc ion
F om he beginning o ibe ealiza ion in he elecom-
munica ions a ea i go o he big de elopmen o he
heo y and p ac ical applica ions. Almos in he same
ime he e we e ideas on he applica ion o ibe s also
in senso s. Iso opic ibe s [1], pola iza ion main aining
ibe s (PMF) and a e ea h doped ibe s [2] ha e been
used in he numbe o senso applica ions. One exam-
ple o an applica ion is he in e e ome ic senso o
gy oscope [3], [4]. Pola iza ion main aining ibe s we e
es ablished o exci ing o op ical adia ion o one po-
la iza ion axis only and main enance pola iza ion s a e
along he whole leng h o he ibe . Acco ding o he
induced bi e ingence, ibe s we e applied in senso s,
e.g. o measu emen o mechanical p essu e [5].
The a i icial bi e ingence caused by he di e en
he mal expansibili y be ween s eng h elemen s and
he ibe cladding eaches high sensi i i y o he ambi-
en empe a u e o su ounding en i onmen [6]. Fo
uni o m exci a ion o bo h ibe axes he e is a pola iza-
ion s a e change o op ical adia ion in he ibe ou -
pu caused by he ambien he mal ield dis u bance.
The change o he pola iza ion s a e o ou pu op ical
adia ion immedia ely de ec s any he mal ield dis u -
bance caused by an ambien he mal sou ce. High ibe
sensi i i y o he ou e he mal ield ini ia ed he idea
o use he PMF applica ion as a senso o he mal ield
dis u bance.
In an o he esea ch wo k, ime de elopmen o ou -
pu pola iza ion luc ua ion in PANDA PMF and bow-
ie o equal exci a ion o bo h pola iza ion axes we e
s udied. Exp essi e luc ua ion led o he cons uc ion
o a ibe senso ealized and e alua ed o λ= 633 nm,
u ilizing good pola iza ion p ope ies o He-Ne lase .
The measu ed esul s alida ed high senso sensi i i y
upon he ex e nal he mal ield. The disad an age o
his senso is i s cons uc ion a angemen using gas
He-Ne lase as a sou ce o op ical adia ion. To elimi-
na e his disad an age and o compa e di e en p op-
e ies o he componen s used, he expe imen was ex-
ended o PANDA PM ibe s and semiconduc o lase s
wi h wa eleng hs o 1550 nm and 1310 nm wa eleng hs.
Resul s o heo e ical analysis and pa ial expe i-
men al es s o λ= 633 nm and 1550 nm we e pub-
lished in p e ious pape s [7], [8], [9], [10]. Two pa ial
expe imen s o λ= 1550 nm ha e been made he e.
The a e o ibe esponse depending upon he dis-
ance be ween ex e nal he mal sou ce and he ibe
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was s udied in he i s one. E ec s o PMF esponse
o i s exposed leng h we e s udied in he second one.
P esen ed wo k is an ex ension o p e ious expe imen s
o a wa eleng h o 1310 nm. This wo k ocuses mainly
on he de e mina ion o ibe esponse in bo h depen-
dences du ing an exci a ion by an ex e nal he mal ield
wi h a iable ini ial empe a u e. All he esul s ob-
ained o he h ee pa icula PM ibe s will be com-
pa ed.
2. P inciple o Senso Func ion
The pa o PMF can be, in p inciple, s udied as a
mul iple linea e a de con aining no pa ial pola iz-
e s and can be desc ibed by means o a uni a y Jones
ma ix. Ou pu op ical adia ion om he PMF can be
desc ibed by cohe ency ma ix C0, ha is de e mined
by he uni a y Jones ma ix o he gi en componen L
and also by a cohe ency ma ix o inpu op ical adia-
ion Cacco ding o: [11]
C0= (LE)⊗(LE)+= (LE)⊗(L+E+) =
=L(E)⊗(E+)L+=LCL+,(1)
whe e + is labelling o he He mi ian conjuga e ma-
ix. By decomposi ion o he cohe ency ma ix o he
ou pu op ical adia ion elemen s o S okes ec o can
be ound, enabling desc ip ion o he ibe senso ea-
u es o he mal ield dis u bance om he poin o
iew op ical in ensi y I.
To de e mine a cohe ency ma ix o ou pu op ical
adia ion a cohe ency ma ix o inpu op ical adia ion
and Jones uni a y ma ix o PMF we e needed. Fo
exci a ion o bo h pola iza ion axes a any angle o
he ibe a clockwise pola ized op ical adia ion was
in oduced, desc ibed by Jones ma ix JRC:
JRC =−i
1.(2)
The su ix RC exp esses igh ci cula pola iza ion.
The cohe ency ma ix o an inpu op ical adia ion p o-
ides as:
C=hE⊗E+i=Ex
Ey⊗E∗
xE∗
y=
=hExE∗
xiExE∗
y
hEyE∗
xiEyE∗
y=Cxx Cxy
Cyx Cyy,(3)
whe e Eis he Jones column ma ix (Jones ec o ) and
E+is i s He mi ian conjuga e ma ix . Equa ion (2)
is exp essed by ma ix Cij o de ine Eq. (10). A e
subs i u ion o Eq. (2) we ob ain he cohe ency ma ix
o ci cula op ical adia ion:
CRC =−i
1⊗i1=1−i
i1.(4)
The phase shi o he linea e a de φis pu in o
he Jones ma ix o a linea e a de wi h azimu h 0 ◦.
By his common ela ion o linea e a de is ob ained
as:
L=



eiφ
20
0e
−iφ
2




.(5)
He mi ian conjuga e ma ix o he ma ix Eq. (5)
can hen be exp essed as:
L+=



e
−iφ
20
0eiφ
2




.(6)
By he subs i u ion o ma ices Eq. (4), Eq. (5) and
Eq. (6) in o Eq. (1) we ob ain cohe ency ma ix o ou -
pu op ical adia ion:
C0
RC =LCRCL+=
=



eiφ
20
0e
−iφ
2



1−i
i1



e
−iφ
20
0eiφ
2




.(7)
By calcula ing he ma ix p oduc in Eq. (7), a e-
sul an ela ion o cohe ency ma ix o ou pu op ical
adia ion can be ob ained:
C0=1−ieiφ
ie−iφ 1.(8)
By decomposi ion o Eq. (8) in o he spin ma ices
using he ollowing equa ion,
C=Cxx +Cyy
21 0
0 1+Cxx −Cyy
21 0
0−1+
+Cxy +Cyx
20 1
1 0+(9)
+Cxy −Cyx
20−i
i0,
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we ob ain:
C0=1 0
0 1+ sinφ0 1
1 0+ cosφ0−i
i0.(10)
F om he ela ion Eq. (10) i is ob ious an assign-
men o componen s on he igh side o he equa ion o
he co esponding componen s o S okes ec o . Uni
ma ix co esponds o he componen S0, he compo-
nen wi h mul iple sinφco esponds o S2and he com-
ponen wi h mul iple cosφco esponds o S3. Dis i-
bu ion o op ical in ensi y Iin he e ical p e e ence
is ze o acco ding o he de ini ion S1=Cxx −Cyy.
Fo he leng h o he op ical ibe equaling o he
mul iple o i s bea leng h and o exci a ion o bo h
pola iza ion axes by means o ci cula pola ized op ical
adia ion wi h no dis u bance o ex e nal he mal ield,
he phase shi φwill be equal o ze o and he co e-
sponding S okes componen S2= 0. Fo op ical ibe
leng h di e en om a mul iple o i s bea leng h and
wi hou e ec o he ex e nal he mal ield dis u bance
he phase shi will be none ze o and will be de e min-
ing he pa icula s a e o pola iza ion. In he case o
ambien he mal ield dis u bance by means o an ex-
e nal he mal sou ce he phase shi will be exci ed
and i will esul as a change o he ou pu pola iza-
ion s a e. This a ia ion o he pola iza ion s a e is
di ec ly p opo ional o he change o φacco ding o
he ela ion Eq. (11). De e mina ion o his change
is ealized by means o pola ize - analyze placed in
he ou pu o ibe . Fo ob aining he maximum sen-
so sensi i i y he o ien a ion o he ou pu pola ize
– analyze is 45 ◦ owa ds pola iza ion axes. By his
a angemen we can measu e he whole ange o he
phase shi , exp essed by he minimum and he maxi-
mum alue o he measu ed op ical in ensi y I.
Due o he cha ac e o he measu ed quan i y, he
op ical in ensi y I, is p e e able o nex desc ip ion
o use a Muelle ma ix. Beha io o he inpu ci -
cula pola ized op ical adia ion p opaga ing h ough
he senso unde conside a ion, he linea e a de , is
exp essed by he Muelle ma ix as ollows:




S0
S1
S2
S3




=



1 0 0 0
0 1 0 0
0 0 cosφsinφ
0 0 −sinφcosφ








1
0
0
1




=
=



1
0
sinφ
cosφ




.(11)
The ou pu op ical adia ion Eq. (11) hi s he linea
pola ize – analyze in he equi ed o ien a ion owa ds
he pola iza ion axes. In he ou pu o pola ize we
ob ain he op ical adia ion exp essed by he S okes
ec o :




S0
0
S0
1
S0
2
S0
3




=1
2




1010
0000
1010
0000








1
0
sinφ
cosφ




=
=1
2




1 + sinφ
0
1 + sinφ
0




.(12)
F om his esul an equa ion i is clea ha he ou -
pu op ical adia ion o he pola ize – analyze will be
linea ly pola ized wi h an o ien a ion o 45 ◦and he
change o op ical in ensi y is di ec ly p opo ional o
he change o phase shi in ibe . F om Eq. (12) i is
e iden ha o gi en a angemen we measu ed by he
pho ode ec o di ec ly he alue o S okes elemen S2.
Since he a ia ions o phase shi in ibe and de el-
opmen o he pola iza ion s a e o p opaga ing op ical
adia ion h ough he ibe , hese a ia ions a e p o-
po ional o he S2and S3acco ding o Eq. (10). To
e alua e hese a ia ions we need know only one mea-
su ed S okes elemen S0
2o S0
3. I S0
2is known, S0
3can
be calcula ed. The measu ed S okes elemen S0
2is de-
e mined om Eq. (12) as:
S0
2=1
2(1 + sinφ) = sinφ
2+ cosφ
22
.(13)
As we measu e op ical in ensi y Io S okes elemen
S0
2and no a phase shi , we de e mine φ om Eq. (13)
as:
φ= a csin(2S0
2−1).(14)
Such analysis deals wi h he desc ip ion o senso
om he poin o iew o he ou e op ical in ensi y
I. In o de o desc ibe in e nal phenomenon in mo e
de ail heo e ical analysis ocusing on he change o he
bea leng h depending upon he empe a u e a ia ion
exci ed by an ex e nal subjec was conduc ed.
3. Phase Shi Va ia ion
Depending on Tempe a u e
When s udying PM ibe empe a u e dependency, i
can be p esumed ha he ou pu pola iza ion s a e
a ia ion is dependen on he e ac i e indices change
o as and slow pola iza ion axes, i.e. he e ac i e
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indices change in oked by a empe a u e change is p o-
po ional o he bea leng h LB a ia ion. This is he
leng h whe e 2πphase shi is in oduced be ween he
wo pola iza ion axes. The a ia ion o bea leng h
depending upon empe a u e can be desc ibed by he
ollowing me hod. The bea leng h can be exp essed
as: [11]
LB=λ
∆ne
,(15)
whe e λis he wa eleng h and ∆neis he di e en ial
index. The di e en ial index is de ined as:
∆ne= ∆ns−∆n ,(16)
whe e ∆nsand ∆n a e di e ences be ween e ac i e
indices o pa icula axes ns,n and he cladding e-
ac i e index nc:
∆ns=ns−nc,
∆n =n −nc.(17)
The dependency o bea leng h a ia ion LBon ∆ne
can be w i en as:
dLB
d∆ne
=−λ
∆n2
e
=−LB
1
∆ne
.(18)
Unde he condi ion ha phase shi a ia ion δis
linea ly dependen on he bea leng h a ia ion LB, i
can be exp essed as:
−dδ
2π=dLB
LB
,(19)
whe e he sign – (minus) indica es he s a e o which
he bea leng h LBdec eases and he phase shi a i-
a ion δinc eases.
By in eg a ion o equa ion Eq. (19) he ollowing e-
la ion is ob ained:
δ=−2πZdLB
LB
=−2π(lnLB+C).(20)
Fo he ambien empe a u e he bea leng h is LB0
and he phase shi a ia ion δ= 0. Fo hese condi-
ions he ollowing o mula is alid:
C=−lnLB0.(21)
By subs i u ing he cons an CEq. (21) in o
Eq. (20), he phase shi a ia ion shall be:
δ=−2πln LB
LB0
.(22)
By subs i u ing Eq. (15) in o Eq. (22), he bea
leng h depending on a di e en ial index ∆ne, phase
shi a ia ion can be ob ained:
δ= 2πln ∆ne
∆ne0
,(23)
whe e ∆ne0is co esponding o LB0. Unde he con-
di ion ha ∆neis linea ly changing wi h empe a u e
ϑ, he ollowing o mula applies:
∆ne(ϑ−ϑ0) = K(ϑ−ϑ0)+∆ne0,(24)
whe e Kis a p opo ion cons an , ϑis he exci a ion
sou ce empe a u e and ϑ0is he ambien empe a u e.
The phase shi a ia ion dependence on empe a u e
is hen exp essed by subs i u ing Eq. (24) in o Eq. (23):
δ(ϑ−ϑ0)=2πln K(ϑ−ϑ0)
∆ne0
+ 1.(25)
The phase shi a ia ion dependence on empe a-
u e exp essed in Eq. (25) is alid on condi ion ha
he di e ence o e ac i e indices o as and slow axes
is p opo ional o he empe a u e. The esul an PM
ibe esponse is dependen on he numbe o exposed
bea leng hs he hea sou ce is a ec ing. The esponse
is di e en due o he cons an sou ce leng h and di -
e en bea leng hs o pa icula PM ibe s. The e o e
i is sui able o conside PM ibe esponses ela ed
only o one bea leng h. The o al phase shi a ia-
ion δdependence on he o al numbe o exposed bea
leng hs and he phase shi a ia ion δLB dependence
on one bea leng h is exp essed by he ollowing o -
mula, whe e Nis he numbe o exposed bea leng hs
LBe ec ed by he hea sou ce:
N=l
LB
,(26)
whe e lis he exposed leng h o PM ibe . As he
hea sou ce e ec a he ends is no de ined exac ly he
numbe Ncan be ounded o an in ege numbe . The
phase shi a ia ion o one bea leng h δLB is exp essed
as:
δLB =δ
N=δLB
l.(27)
Fo a di e en ial index he ollowing o mula is alid:
∆ne=λ
LB
.(28)
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Tab. 1: Fea u es o PM ibe s.
Type o OF Wa eleng h Bea leng h ∆neFac o LB/l
[nm] LB[mm] [×10−3] [×10−3]
PM630-HP 633 2 0.316 7.2
PM1300-HP 1310 4 0.327 14.5
PM1550-HP 1550 5 0.31 18
Tab. 2: Phase shi a ia ion pe one bea leng h o ibe PM630-HP.
Phase shi a ia ion pe one bea leng h
Tempe a u e sou ce dis ance om PMF
5 [cm] 8 [cm] 11 [cm]
Temp.
50 ◦C 13.00 12.00 8.90
π×10−3[ ad]
45 ◦C 10.90 8.20 7.10
40 ◦C 7.70 6.80 5.30
35 ◦C 5.70 4.70 2.90
Fac o s LB/l and di e en ial e ac i e index alues
∆neo pa icula PM ibe s a e p esen ed in Tab. 1. In
he case he e is m mumbe o exposed leng hs o PMF
he alue o he ac o shall be LB/ml. The di e en-
ial indices ∆neo s udied PM ibe s a e p ac ically
he same and ha he di e ence o e ac i e indices
be ween as and slow axes and mechanism o bi e in-
gence gene a ion is e y simila o all he selec ed PM
ibe s. This conclusion is suppo ed by he p oduc ion
echnology o iden ical p oduce du ing indus ial p o-
cess o PANDA s uc u es o pa icula PM ibe s. The
empe a u e esponse ela ed o he one bea leng h
should be li e ally he same.
A coe icien o de e mining sensi i i y pe bea
leng h o leng h l= 27.5cm is p esen ed in Tab. 1.
The leng h lis co esponding o he leng h o he ap-
plied hea sou ce.
4. Expe imen al Resul s
The aim o ou expe imen al es s is o de e mine PM
ibe PANDA ype esponse du ing i s he mal ield dis-
u bance when an ex e nal he mal sou ce wi h di e -
en ini ial empe a u es was applied. The empe a u e
was changed om 50 ◦C o 35 ◦C in 5 ◦C s eps. Mea-
su emen s we e aken o wo di e en exposed ibe
leng hs. The ibe esponse was in es iga ed o h ee
di e en dis ances (5 cm, 8 cm and 11 cm) be ween
he he mal sou ce and he op ical ibe . Dis u bance
o he he mal PM ibe ield was done using a plas-
ic basin wi h a cons an amoun o wa e hea ed o
he desi ed empe a u e. I was placed on a gap be-
ween 2 polys y ene boa ds Fig. 1 ha co e he unex-
posed pa o he PMF.
The abo e layou in he senso block enables he ex-
posi ion o he equi ed leng h o in es iga ed ibe and
Fig. 1: Tes se up o measu ing wo exposed leng hs [9].
also enables o a ange he equi ed dis ance o ambien
he mal ield om he ibe . In his expe imen , a ibe
esponse o 1 and 3 exposed leng hs we e es ed be-
ween co k cylinde s. One exposed leng h was 27.5 cm.
The sou ce o op ical adia ion used o λ= 633 nm
was He-Ne lase , o λ= 1310 nm and 1550 nm lase
diodes ML 725 B8F and ML 925 B45F, espec i ely,
we e used.
The bea leng h ca alogue alue o ibe PM630-HP
is LB≤2mm, o PM1300-HP is LB≤4mm and
o PM1550-HP is LB≤5mm. Op ical powe o
λ= 1310 nm and 1550 nm was measu ed in in e als
o 0.5 s using a GENTEC-EO P-LINK powe me e
wi h a PH78-Ge pho odiode. Fo λ= 633 nm, an
analog powe me e in combina ion wi h a HP 34401A
digi al mul ime e was used con olled by MATLAB.
The in e al o aking hese eadings was 0.64 s.
Figu e 2 shows an example o measu ed pola iza ion
s a e in he abo e desc ibed gi en con igu a ion.
Fo easie illus a ion and compu e modeling o
de elopmen o he ou pu pola iza ion s a e, he
Poinca e sphe e [12], [13] was c ea ed in he MAT-
LAB en i onmen . The pola iza ion s a e in Fig. 2
o 1550 nm is depic ed on Poinca é sphe e in Fig. 3.
The measu ed esul s we e p ocessed in wo g aphs
e sions o phase shi , as a dependency on empe a u e
o di e en dis ances be ween he he mal sou ce and
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Fig. 2: Example o ou pu op ical powe o λ= 1310 nm,
1310 nm and 1550 nm, 3 exposed leng hs o ibe , ini-
ial empe a u e 50 ◦C and 5 cm dis ance be ween he
ex e nal he mal sou ce and he PM ibe .
he ibe and as a dependency on he dis ance o he
selec ed empe a u es. The p esen ed app oxima ions
come om eadings a empe a u es o 50 ◦, 45 ◦, 40 ◦
and 35 ◦and a dis ances o 5 cm, 8 cm and 11 cm.
Examples o hese dis ances o one exposed leng h a e
shown in Fig. 4, Fig. 5, Fig. 8, Fig. 9, Fig. 12 and
Fig. 13, esul s o h ee exposed leng hs a e in Fig. 6,
Fig. 7, Fig. 10, Fig. 11, Fig. 14 and Fig. 15.
Fig. 4 and Fig. 6 show ha dependencies o phase
shi a ia ion on he empe a u e a e app oxima ely
linea . Simila ly wi h inc easing exposed leng h he
phase shi a ia ion inc eases oo, bu slowly. The e
was only one anomaly p esen ed a he dis ance o
5 cm, whe e a big alue o phase shi a ia ion was
caused by he he mal sou ce a ec ing also he neigh-
bo ing leng hs o he ibe ha we e no supposed o
be exposed.
Examples o he phase shi a ia ion dependence
on he dis ance o selec ed empe a u es a e shown in
Fig. 5 and Fig. 7. Nonlinea i y o he dependency o
one exposed leng h alida es he ac ha o sho e
dis ances and g ea e empe a u e emission o he mal
sou ce he e a e undesi ed in e e ences, e ec ing o he
Fig. 3: Pola iza ion s a e eadings o he ou pu op ical adia-
ion co esponding o he Fig. 2 a 1550 nm.
Fig. 4: Phase shi a ia ion dependency on empe a u e o
one exposed leng h o winding o PM630-HP.
Fig. 5: Phase shi a ia ion dependency on he dis ance o
he mal sou ce om PM ibe o one exposed leng h
o winding o PM630-HP.
han he equi ed exposed leng h. This hea e ec
is subs an ially smalle in he case o h ee exposed
leng hs, as he undesi ed co e age o e ec ed leng hs is
smalle . The p esen ed examples a e a pa o a la ge
se o measu emen s o sensi i i y es s depending on
he ibe con igu a ion and he ambien empe a u e.
One o he aims o his s udy is o compa e he mal
ield dis u bance o h ee PM ibe s wo king a n di e -
en wa eleng hs o 633 nm, 1310 nm and 1550 nm. As
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Fig. 6: Phase shi a ia ion dependence on empe a u e o
h ee exposed leng hs o winding o PM630-HP.
Fig. 7: Phase shi a ia ion dependence on dis ance be ween
he mal sou ce and PM ibe o h ee exposed leng hs
o winding o PM630-HP.
Fig. 8: Phase shi a ia ion dependence on empe a u e o one
exposed leng h o winding o PM1300-HP.
Fig. 9: Phase shi a ia ion dependence on dis ance be ween
he mal sou ce and PM ibe o one exposed leng h o
winding o PM1300-HP.
he phase shi a ia ion δis dependen on he numbe
o bea leng hs, he measu ed esponses we e ecalcu-
la ed acco ding o Eq. (27). Ob ained esul s o pa -
Fig. 10: Phase shi a ia ion dependence on empe a u e o
h ee exposed leng hs o winding o PM1300-HP.
Fig. 11: Phase shi a ia ion dependence on dis ance be ween
he mal sou ce and PM ibe o h ee exposed leng hs
o winding o PM1300-HP.
Fig. 12: Phase shi a ia ion dependence on empe a u e o
one exposed leng h o winding o PM1550-HP.
Fig. 13: Phase shi a ia ion dependence on dis ance be ween
he mal sou ce and PM ibe o one exposed leng h o
winding o PM1550-HP.
icula PM ibe s a e p esen ed in Tab. 2, Tab. 3 and
Tab. 4.
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Tab. 3: Phase shi a ia ion pe one bea leng h o ibe PM1330-HP.
Phase shi a ia ion pe one bea leng h
Tempe a u e sou ce dis ance om PMF
5 [cm] 8 [cm] 11 [cm]
Temp.
50 ◦C 4.70 3.85 3.18
π×10−3[ ad]
45 ◦C 3.71 2.72 2.05
40 ◦C 2.66 2.12 1.82
35 ◦C 1.89 1.56 1.44
Tab. 4: Phase shi a ia ion pe one bea leng h o ibe PM1550-HP.
Phase shi a ia ion pe one bea leng h
Tempe a u e sou ce dis ance om PMF
5 [cm] 8 [cm] 11 [cm]
Temp.
50 ◦C 2.85 1.14 0.80
π×10−3[ ad]
45 ◦C 2.00 0.95 0.67
40 ◦C 1.43 0.83 0.57
35 ◦C 0.58 0.48 0.27
Fig. 14: Phase shi a ia ion dependence on empe a u e o
h ee exposed leng hs o winding o PM1550-HP.
Fig. 15: Phase shi a ia ion dependence on dis ance be ween
he mal sou ce and PM ibe o h ee exposed leng hs
o winding o PM1550-HP.
All measu emen s show ela i ely high ins abili y
and sensi i i y o o he su ounding e ec s such as
andom empe a u e changes, mechanical ib a ions
e c. The e o e his applica ion is sui able as a sen-
so o he mal ield dis u bance, bu no as a p ecision
empe a u e senso . High sensi i i y o empe a u e
changes could be combined wi h sui able ibe con ig-
u a ion o ge he sensi i i y o mechanical ib a ions,
Such senso applica ions could be used o e i o y
moni o ing, o p e en undesi ed objec s app oaching,
e c.
5. Conclusion
The p esen ed esul s comple e he es s om a p e i-
ous s udy o λ= 633 nm. By compa ing hese esul s,
he expec ed conclusion can be s a ed, ha he e is a
highe sensi i i y o λ= 633 nm, mainly due o he
sho bea leng h and high cohe ency o he He-Ne lase
sou ce. To each compa able sensi i i y a 1550 nm a
longe segmen o he exposed ibe should be used. As
ad an age o LD o 1550 nm is he compac se up o
he sou ce- ibe -pola ize -de ec o .
The nex s udy should ocus on a de ailed analysis
o he e ec o sou ce cohe ency on he ibe beha io
in espec o a phase shi a ia ion du ing he mal
ield dis u bance. Gene ally, also analysis o phase shi
a ia ion in ime du ing all he ans o ma ions s ages
could be e y in e es ing, i s he ini ial abso p ion
o he he mal adia ion, hen successi e empe a u e
s abilizing and hen ansi ion in o a new s able s a e.
Based on his, a compac solu ions could be buil o be
u ilized in o he p ac ical applica ions.
Acknowledgmen
This wo k has been suppo ed by P ojec o he de el-
opmen o K217 Depa men , B no Uni e si y o De-
ense – Mode n elec ical elemen s and sys ems.
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Re e ences
[1] PERLICKI, K. Iden i ica ion o Pola iza ion con-
igu a ion based on o sion and Cu a u e Calcu-
la ion. WSEAS T ansac ions o Communica ions.
2006, ol. 5, iss. 4, pp. 631–633. ISSN 1109-2742.
[2] VLCEK, C. S udy o ex e nal e ec s on he po-
la iza ion p ope ies o selec ed ibe segmen s.
WSEAS T ansac ions on Communica ions. 2006,
ol 5, iss. 4, pp. 611–616. ISSN 1109-2742.
[3] MARTELLUCCI, S., A. N. CHESTER and A. G.
MIGNANI. Op ical senso s and mic osys ems,
new concep s, ma e ials, echnologies. New Yo k:
Kluwe Academic Publishe s, 2000. ISBN 978-
0306463808.
[4] FRADEN, Jacob. Handbook o mode n senso s:
physics, designs, and applica ions. New Yo k:
Sp inge , 2010. ISBN 978-1-4419-6465-6.
[5] HOTATE, K. and S. O. S. LENG. T ans e sal
o ce senso using pola iza ion-main aining ibe
independen o di ec ion o applied o ce: p oposal
and expe imen . In: 15 h Op ical Fibe Senso s
Con e ence Technical Diges . OFS 2002. Po land:
IEEE, 2002, pp. 363–366. ISBN 0-7803-7289-1.
DOI: 10.1109/OFS.2002.1000586.
[6] ZHANG, F. and J. W. Y. LIT. Tempe a-
u e sensi i i y measu emen s o high-bi e ingen
pola iza ion-main aining ibe s. Applied Op ics.
1993, ol. 32, iss. 13, pp. 2213–2218. ISSN 1559-
128X.
[7] DVORAK, F., J. MASCHKE and C. VLCEK.
Fibe senso o empe a u e ield dis u bance. In:
4 h In e na ional Con e ence on Ci cui s, Sys ems
and Signal (CSS’10). Co u: Wo ld Scien i ic and
Enginee ing Academy and Socie y, 2010, pp. 134–
139. ISBN 978-960-474-208-0.
[8] DVORAK, F., J. MASCHKE and C. VLCEK.
U iliza ion o bi e ingen ibe as senso o
empe a u e ield dis u bance. Radioenginee ing.
2009, ol. 18, no. 4, pp. 639–643. ISSN 1210-2512.
[9] DVORAK, F., J. MASCHKE and C. VLCEK.
Response analysis o he mal ield dis u bance
senso . In: Elec o-Op ical and In a ed Sys-
ems: Technology and Applica ions VIII. P ague:
SPIE, 2011, pp. 501–508. ISBN: 978-081948813-8.
DOI: 10.1117/12.897707.
[10] DVORAK, F., J. MASCHKE and C. VLCEK.
S udy o ibe PM1550-HP esponse in he se
o he mal ield dis u bance senso . In: P oc. o
NAUN In e na ional Mul i-con e ence, Recen Re-
sea che s in Ci cui s, Sys ems, Communica ions
&Compu e s. Pue o De La C uz: WSEAS, 2011.
pp. 137–141. ISBN 978-1-61804-056-5.
[11] COLLETT, Edwa d. Pola ized ligh in ibe op-
ics. Linc o : The PolaWa e G oup, 2003.
ISBN 978-081-9457-615.
[12] COLLETT, E. and B. SCHAEFER. Visual-
iza ion and calcula ion o pola ized ligh . I.
The pola iza ion ellipse, he Poinca é sphe e
and he hyb id pola iza ion sphe e. Applied op-
ics. 2008, ol. 47, iss. 22. ISSN 1559-128X.
DOI: 10.1364/AO.47.004009.
[13] COLLETT, E. and B. SCHAEFER. Visualiza-
ion and calcula ion o pola ized ligh . II. Ap-
plica ions o he hyb id pola iza ion sphe e. Ap-
plied op ics. 2008, ol. 47, iss. 22. ISSN 1559-128X.
DOI: 10.1364/AO.47.004017.
Abou Au ho s
Filip DVORAK was bo n in 1977. He ecei ed
his M.Sc. deg ee om he B no Mili a y Academy
in 2004 and Ph.D. deg ee in 2011. He is cu en ly
lec u e wi h he Depa men o Rada Technology,
B no Uni e si y o De ense. His wo k is ocused on he
modeling o ibe s and op ical componen s by means
o ma ix me hods in he MATLAB en i onmen and
analysis o ibe senso s.
Jan MASCHKE was bo n in 1942. He e-
cei ed his M.Sc. deg ee in 1965 and Ph.D. deg ee in
1978. He was a eache a he Technical school a
Lip o ský Mikulas and a he Mili a y Academy since
1968, and associa e p o esso o he Depa men o
elec ical enginee ing since 1985. He e i ed in 2005.
His esea ch wo k ocused on he p oblems o ibe
op ics and ibe senso s.
Ces mi VLCEK was bo n in 1946. He ecei ed his
M.Sc. deg ee in 1969 and Ph.D. deg ee in 1980. He
was a eache a he Mili a y Academy since 1969,
associa e p o esso since 1985, head o he Elec ical
Enginee ing and Elec onics Depa men since 1997
and p o esso since 2000. His esea ch wo k du ing
he las yea s was aimed a p oblems o op oelec onic
signals and sys ems, single mode ibe componen s
modeling, a mosphe ic op ical communica ion sys ems
and analysis o senso s o mili a y applica ions.
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