A icle No pee - e iewed e sion
Field Ion Mic oscopy o Tungs en Nano-
Tips Coa ed wi h Thin Laye o he Epoxy
Resin
Dina a Sobola * , Amma Alsoud , Alexand Knápek , Ma wan Mousa , Richa d Schube , Pa la Ko
č
ko á ,
Pa el Ška ada *
Pos ed Da e: 30 July 2024
doi: 10.20944/p ep in s202407.2357. 1
Keywo ds: Field ion emission; ungs en a omic dis ibu ion; epoxy molecula dis ibu ion; composi e ield
emi e ; composi e elec on sou ces
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Science, C oss e , Google Schola , Scili , Eu ope PMC.
Copy igh : This is an open access a icle dis ibu ed unde he C ea i e Commons
A ibu ion License which pe mi s un es ic ed use, dis ibu ion, and ep oduc ion in any
medium, p o ided he o iginal wo k is p ope ly ci ed.
A icle
FieldIonMic oscopyo Tungs enNano‐TipsCoa ed
wi hThinLaye o heEpoxyResin
Dina aSobola1,Amma A.AlSoud2,Alexand Knápek3,Ma wanS.Mousa4,Richa dSchube
2,Pa laKočko á2,Pa elŠka ada2,*
1Ins i u eo Physicso Ma e ials,CzechAcademyo Sciences,Žižko a22,61662B no, heCzechRepublic
2Depa men o PhysicsFacul yo Elec icalEnginee ingandCommunica ionB noUni e si yo
Technology61600B noCzechRepublic
3Ins i u eo Scien i icIns umen so CzechAcademyo SciencesK alo opolska14761264B noCzech
Repubic.
4Depa men o RenewableEne gyEnginee ing,Jada aUni e si y,I bid21110,Jo dan.
*Co espondence:[email p o ec ed];[email p o ec ed]
Abs ac :Thispape epo s esul so analysiso ieldionemissionmechanism om ungs en‐epoxy
composi eemi e s ha a ecompa ed o ungs ennano‐ ieldemi e s.In hiscon ex , hemechanismo
emission om his ypeo emi e sisdesc ibedbasedona heo yo inducedconduc i echannels.The ungs en
emi e swe ep epa edusing heelec ochemicalpolishing echniqueandcoa edwi halaye o heepoxy
esin.Fieldionmic oscope(FIM)analysesa e epo edincluding hes udyo heemission‐iondensi y
dis ibu ions ombo h heuncoa edandcoa edemi e s.Two o mso emissionpa e nsha ebeenobse ed
in heionemissionmic oscopy echniquedesc ibing hedi e encesin heemissionmechanismo bo h ypes
o emi e s.Theobse ed esul sshow:(a) heexpec edc ys allinesu acea omicdis ibu ionimageso he
ieldionmic oscopyin hecaseo uncoa ed ungs en ips,and(b) andomlydis ibu edemissionspo s ha
desc ibe heloca ionso heinducedconduc i echannelsinside he esincoa inglaye .
Keywo ds: ieldionemission; ungs ena omicdis ibu ion;epoxymolecula dis ibu ion;
composi e ieldemi e ;composi eelec onsou ces
1.In oduc ion
The e m‘ ieldemission’candesc ibebo helec onandionemissionmechanisms.Basedon
Fe mi‐Di acs a is‐ ics, hephysicsbehind ieldemission heo ywasin oducedasoneo he
signi ican applica ionso quan um‐mechanical unnelingand ee‐elec on heo ieso condensed
ma e in he1920sand1930s[1–3].Cold ieldelec onemissionis he ansi iono elec ons h ough
a educedpo en ialene gyba ie om hesu aceo mic o/nanopoin edemi e ( ip)in o acuum.
Acco ding oFowle ‐No dheim heo y,when woelec odes(usuallysepa a edbyasmalldis ance
no mo e han10mm)wi honeo hemisamic o/nanopoin edemi e ,anda e applyinganin ense
elec ic ield(usuallyin he angeo 3V/nm),elec onscanquan um‐ unnel h oughanexac
iangula po en ialene gyba ie omene gyle elsclose o heFe mile elo hema e ialused[4–
9].
In hecaseo ieldionemission(FIM), hesys emisusually illedbyagasa lowp essu e(such
asHeo Ne).Thenano ipisse obe heanodeallowing heusedgasa oms obeionizedwhen
loca ednea heapexsu ace.Elec ons om heusedgasa omscan unnel h ough he educed
po en ialene gyba ie p o idingposi i elycha gedions(likeNe+).Theseionsa e henaccele a ed
wi hin heappliedex ac ionelec ic ield o‐wa ds heca hodewhichisanimagingsc een(usually
a
luo escen sc een).Theobse edpho ons o mwha isknownas heFIMpa e n,which
desc ibes heionsemissiondis ibu ion(amagni iedimageo hesu acea omicdis ibu ion)
asbeingemi ed om hesu aceo he ip[10–14].Fieldionemi e sa epa icula lya ac i e
assou ceso ionbeams.Due o hei sui ableemissionp ope iesandsimpleope a ingp inciple,
Disclaime /Publishe ’s No e: The s a emen s, opinions, and da a con ained in all publica ions a e solely hose o he indi idual au ho (s) and
con ibu o (s) and no o MDPI and/o he edi o (s). MDPI and/o he edi o (s) disclaim esponsibili y o any inju y o people o p ope y esul ing
om any ideas, me hods, ins uc ions, o p oduc s e e ed o in he con en .
P ep in s.o g (www.p ep in s.o g) | NOT PEER-REVIEWED | Pos ed: 30 July 2024 doi:10.20944/p ep in s202407.2357. 1
© 2024 by he au ho (s). Dis ibu ed unde a C ea i e Commons CC BY license.
2
his ypeo emi e shasbeenusedinse e alapplica ions,suchasscanningionmic oscopy
[15,16].
The esul sasob ained o he ieldelec onemissionmic oscopy(FEM)expe imen s om
composi eemi e s(wi hme al‐insula o ‐ acuumin e ace) epo edexo icandin e es ing
beha io ,suchasob ainingaswi ch‐oncu en ,whe e hemeasu emen o heemi edcu en
isexcep ionally ounda high alues( heemissionp ocesssuddenlys a sa he angeo ew
mic o‐amps)and he ela edcu en ‐ ol agecha ac e is icshaslowe h eshold ol ages.
Ano he beha io hasbeen epo edin heob ainedemissionpa e nin heFEM,whe e he
emi ‐ edcu en densi ydis ibu ionshowsmo e ocusedandb igh e pa e n han hecaseo
heuncoa edemi e s.Inaddi ion o ha ,di e en beha io in hecu en ‐ ol age
cha ac e is icshasbeen epo edalongwi hlowe h esh‐ old ol agewhenope a ing he
expe imen a e heoccu enceo heswi ch‐onphenomenon[17–26].TheFIM esul s om
me al‐insula o composi eemi e sha ebeenp e iously epo ed omdi e en ypeso
insula o ssuchaspolyme s[27–31], he esul sshow andomlydis ibu edloca ionso in ense
andb igh spo swi hin heFIMpa e n.
In hiswo kwediscuss heFIM esul s om he ungs en‐epoxycomposi eemi e s.The
esul sp esen mul ipleswi ch‐onbeha io and heFIMpa e np o idesmo ee idence o he
c ea iono heinduced unnelingconduc i echannelsasdiscussedbe o e.
2.Ma e ialsandMe hods
2.1.Ma e ials
Tungs enis
one
o hema e ials equen lyused o manu ac u ing ieldemi e ips[21,23],
becauseo i ssui ablep ope ies,suchasahighmel ingpoin o 3414
°C[32],s i ness
(
s eng h
),highdensi y,chemicals abili y,alongwi hha ing helowes apo p essu ea
1650°C,inaddi ion o
he
simplep epa a iono mic o/nano‐ ipemi e susing heelec oly ic
polishing echniqueasca hodep oduc ion echnology[8,20].
In hisexpe imen ,weusedhighpu i y(99.99%)poly‐ c ys alline ungs enwi eswi ha
diame e o 0.1
mm
andawo k unc ion alueo 4.66eV[33],p o idedbyGood el‐ lowCamb idge
L d.(Hun ingdon,Uni edKingdom).Be‐ o e heelec ochemicale chingp ocess, he ungs en
sampleswe ep epa ed1.0cminleng h.Thesesampleswe e hene chedand ieldemission ips
wi happ oxima ely70nmo cu a u e adiuswe eob ained.Thep epa ed ieldemission ipswe e
henusedasuncoa ed ieldionemi e sand hebasema e ial o hecomposi eemi e s.
As o hecoa inglaye ,weha eused hesinglecom‐ ponen epoxy esinb andedwi h
‘Epoxyli e478(E‐478)’,p oducedbyElan asEu ope.TheE478epoxy esincon‐ sis so
Poly(BisphenolA‐co‐epichlo ohyd in),Neopen ylglycoldiglycidyle he ,polyglycol,and
T ichlo o(N,N‐dime‐ hyloc ylamine)bo on.Theelec icals uc u eo heE478wasp e iously
epo edwi hlocalwo k unc ion alueo
3.42eV,ene gygapo 3.94eV,andelec ona ini y
o
2.16eV[33].Thismakes
he
E478sui able o ieldionmic oscopyapplica ions.
2.2.Me hodology
2.2.1.Elec ochemical
E ching
The ungs enwi esa eplacedina0.4mmindiame e coppe ubes.Thesamplesa e hen
a achedas heanodeo aspecialins umen ,whe e heca hodeisse obeanickelwi e.
Thisins umen canp o ide ieldemissionnano‐ ipswi hapex adiuso app oxima ely20
nmusing hed op‐o me hodo heelec ochemicalpolishing echnique.Thee chan usedisa
5Msolu iono sodiumhyd oxide(NaOH),whe ei is oundbe e obeuseda e 4‐7hou s,
un il heNaOHpa iclesa ewelldissol edand hesolu ioniscooleddown.Tos a he
polishing
p ocess,app oxima ely10mlo hesolu ionisaddedin heins umen specialplas ic
con aine whe e he woelec odesa eimme sedin heNaOHsolu ion.These ‐upis hen
connec ed oapowe supplyp o idingapolishingAC ol ageo 20V.When he ungs enwi e
begins oco ode, hea
ppliedAC
ol age
isg adually educedun ili eaches2
V.Thela e
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3
poin isex emelyimpo an ,as hecu ‐o imeo hee chingci cui g ea lya ec s he
sha pnesso hegene a ed ip.
Thep epa edsampleswe e hencleaned omany esid
ualso hehyd oxidesolu ionon he
su aceo he ip.Thecleaningp ocedu eincludesimme sing hepolishedsamplesinalcohol
ollowedbyadis illedwa e ul asonicba h o 20minu es.
The ollowede chingp ocedu ein hisexpe imen ul ills hediame e equi emen o FIM
expe imen s,since
he equi ed adiuso heFIM ipshouldno bela ge han100nm,
and hisp ocedu ep o idesFE ipswi h
adiiapp oxima elyin he angeo 20nmbe o e he
coa
ingp ocess.In hisexpe imen , he adiuso cu a u e o hep epa ed ipswas70
nm.
2.2.2.Coa ingP ocess
To
apply
hecoa inglaye son he ipsu ace, heNaOHsolu ioncon aine is eplaced
wi hano he con aine o heepoxy esin.Thecoa ingp ocessisbasedoncon olled ip
dippingandgene allyin ol es womains eps.The i s s epis oimme se hecleaned ipin
heepoxy esinslowlyandpe pendicula ly o he esinsu ‐ ace.Repea ing hiss epc ea es
hicke coa inglaye s,aseachdipc ea esacoa inglaye o 20nmin hickness[17].Thesecond
s epin ol eshea ing hecoa ed ipsina acuum u nace o 5hou sa 423K,Memme
UN55
(B
u
¨
c
h
bac
h,
Ge many).Thiss episimpo an oexpel hesol en and ocu e heepoxy
esinon hesu aceo
he
coa ed
ip[17,21].
Achie ingade inedimme sionandp ecisepe pendicula i yo hecoa ing(ande ching)
p ocessis e yimpo an .Fo his eason, hee chingde iceisconnec ed oadigi al isible‐
ligh mic oscope o ace hee ching/coa ingp ocess.Thiscombina ionisbe e ad ised oob ain
mo econ ollableandmoni o ede ching/coa ingp ocess.
2.2.3.FieldIonMic oscopy
The es edemi e sha e
beenusedass anda dFIMionsou ces. hesepa a iondis ance
be ween hesampleand heFIMimagingsc eenwasse o10mm.Thesamplesha ebeen
ins alledinsidealase assis edwide‐angle omog aphica omp obe(LaWaTAP)de elopedby
Cameca(Genne illie s,F ance).In hisexpe imen ,Neon(Ne)gaswasusedas heimaginggas
o heFIMin es iga ions.In hiscase, heca hodewasaphospho ussc een,and heanodewas
hesample.Thus,Neionswe egene a ednea hesamples’apexsu aceunde hein luenceo
hedenseelec ic ield,and hen obep ojec ed owa ds hephospho ussc een[10,15].The
phospho ussc eenisp epa ed om anspa en glasscoa edwi ha hinlaye o in‐oxide,
whichis henco e edbyphospho uslaye oin e ac wi hinciden ionsand eco d heion
emissionmic oscopepa e ns.
Thesys em empe a u emus bekep a e ylow empe a u esin he angeo 30–90K, o
educesu acedi usiono hesamplea omsand husimp o e hecon olo he ield
e apo a ionp ocess.TheFIMexpe imen sha ebeenpe o medinul a‐high acuum
condi ionswhe e hebackg oundchambe p essu eiskep below10
−
9
Pa,and
heNe
imaging
gasp essu ewasse o10−5Pa[10,15].
3.Resul sandDiscussion
3.1.FieldIonMic oscopy
Thes uc u eo FIMpa e ns o heuncoa ed ungs ensamplesiswellknown[11].Fo he
samplebeingdiscussedin hisa icle, hehigh esolu ionFIMimage o hea omics uc u eis
ob aineda 7.5kVasp esen edinFigu e1,whe e hesu acea omicdis ibu ionshowsdi e en
ace so hepolyc ys alline ungs enin hecen e o he ieldo iew.
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Figu e1.
Thesu acea omicdis ibu iono polyc ys alline ungs ennano ipasob ained
om ieldionemissionmic oscopya 7.5kV.
Fo hecoa ed ungs ensamples, hede ec ed ieldelec onemission(FEM)beha io is
cha ac e izedbyaswi ch‐onphenomenonand ocusedsingleb igh spo .Suchbeha iou hasbeen
explainedbe o ebyMousain1986by
hec ea iono c ys allizedchannelswhichallow he
elec onspass h ough o/ om acuum o he ungs ensu ‐ ace[17].Thedi e encein heFEM
beha io be ween heuncoa edandcoa ed ungs ensamplesisp esen edinFigu e2,andas
obse edbe o eelsewhe e[34].
Figu e2.
The ieldelec onemissionpa e no (a)coa ed ungs en ip,and(b)same
uncoa ed ip.
In hiss udy, heused ipisconnec ed oahigh ol agepowe supply.Theapplied ol age
wasinc easedslowlyun il he i s ionemissionp ocessobse eda 5kV,whe e heobse ed
FIM esul sa espli in o h eephases.The i s phasedesc ibesa ol agepe iod om5
−
7kV
and
desc ibed
inFigu e3.In hissi o igu es, heyellowhigh‐ligh ed egions(o heb igh
spo s)desc ibe heimagingo hemolecula dis ibu iono he esinlaye ,while he ed
P ep in s.o g (www.p ep in s.o g) | NOT PEER-REVIEWED | Pos ed: 30 July 2024 doi:10.20944/p ep in s202407.2357. 1
5
highligh ed egions(o hedullspo s)desc ibe hea omicdis ibu iono he ungs ensu aceas
ob ained h ough he esinlaye .
Figu e3.
Thesu acemolecula (b igh o yellowhighligh ed)anda omic(dullo ed
highligh ed)dis ibu ionso coa edpolyc ys alline ungs ennano ipasob ained om
ieldionemissionmic oscopya (a)5.0kV,(B)5.5kV,(C)6.0kV,(D)6.6kV,(E)7.0kV,
(F)7.2kV.
Theappea anceo heb igh spo s(yellowhighligh ed egions)is ela ed o heNe
+
when
di ec lyionizedby heo ganicmoleculesa he esinsu ace.A hisle el, heb igh e he
spo s hehighe gene a iondensi yo heemi edNe
+
canbeob ained,and hela ge insize
wi hmul ipleconnec edci cula shaped egions(o spo swi h ales)desc ibe heimagingo
mo ea omswi hin hesamemolecule.
Theappea anceo hedullspo s( edhighligh ed egions)is ela ed oindi ec ioniza ion
o Ne
+
.Thiscanbeob aineda su ace egionswi h hin esinlaye ,whe e heelec onso Ne
a omscan unnel h ough he esinmolecules o he ungs ensu acea oms,whichin u nhelps
o loca ingandimagingo hese ungs ena omswi hlowe densi yo emi edNe
+
.
Sincemoleculesa esyn hesizedbymo e hanana om, hep oduc iono heNe
+
willbe
highe due o hein‐
c easeo hesuppliedioniza ionspo s.Mo eo e ,molecules
ha emo e
a oms obecap u edandimaged.
Thisiswhy hedi e enceinsizeandb igh nessbe ween
he wob igh nessle els(yellowand ed egions)is ela ed o hedi e enceo heimaged
elemen s,whichp o ideap oo o hesugges ed heo y.Aschema icdiag amo hisp ocess
isp oposedinFigu e4.
(
a
)
(
b
)
(
c
)
(
d
)
(
e
)
(
)
P ep in s.o g (www.p ep in s.o g) | NOT PEER-REVIEWED | Pos ed: 30 July 2024 doi:10.20944/p ep in s202407.2357. 1
6
Figu e4.
Aschema icdiag amo heioniza ionp ocesso Negason hesu aceo
coa ed ungs ensamples.
Tosimpli y hede ec ionanddis inguishingme hodbe ween he esinsu acemolecules
and ungs ensu acea omsweuse heb igh nessle elo heimagingspo s.since hemolecules
a ela ge insize hana oms, hecon‐ cen a iono ionizedNea omswillbehighe when
ob aineda moleculesp o idingb igh e spo s.
Thesecondphaseo he esul swe eob aineda he ol age ange7
.
2
−
9
.
6kV.A his
ol age ange, heFIMimagesshowonly hea omicdis ibu iono he ungs ensu ace h ough
he esinlaye ,whichisclea lyseen om hedullspo sinFigu e5.Theb igh spo sin hiscase
a esmalle insize han heonesdesc ibedinFigu e3,whichmeans heydesc ibe ungs en
su acea omsbu wi hmo ein enseioniza ionp ocess o heNegas.
Figu e5.
Thesu acemolecula (b igh )anda omic(da k)dis ibu ionso ”coa ed”
polyc ys alline ungs ennano ipasob ained om ieldionemissionmic oscopya (a)
8.6kV,(B)9.0kV,(C)9.6kV.
The hi dandlas phaseo he esul swe eob aineda
he ol age ange10
.
0
−
15
.
0kV. he
FIMimages(Figu e6)
shownew
ac i e
esinsu ace egions ocon ibu ein he
Neioniza ion
p ocess.Again, heb igh la gespo sa e ela ed o esinsu acemolecules,while hesmall
b igh anddullspo sa e ela ed o ungs ensu acea oms.Inaddi ion owha
men ioned
be o e,
Figu e6(d‐ )showblu edla geb igh spo s,whicha ebelie ed obeob ained o inne esin
su acemolecules ha we eimagedby unnelingioniza ionp ocess,whe e heNe
+
we eionized
bylosing hei elec onswhenbeing unneled oinne su ‐ acemolecule,whe e heg adien in
b igh nessis ela ed o hein ensi yo ioniza iono Negas.
(
a
)
(
b
)
(
c
)
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Figu e6.
Thesu acemolecula anda omicdis ibu ionso coa edpolyc ys alline
ungs ennano ipasob ained om ieldionemissionmic oscopya (a)10.0kV,(B)11.6
kV,(C)12.8kV,(D)14.0kV,(E)14.6kV,(F)15.0kV.Theyellowhighligh ed egions
indica einne esinsu acemoleculesimagedby unnelingioniza ioncu en s.
A some egions,whe e heepoxylaye was e y hin,
i waspossible oimage he ungs en
su ace
a oms
when
heNe
+
a ec ea ed h ough unnelingcu en s.Neelec
onswe echa ging
he esinmoleculeswhichin u na e
discha ged
h ough heclose ungs ena om.Thisp ocess
helps oloca e hesea omsinaddi ion o heinne esinsu acemoleculesasseen om he
blu edspo sinFigu e6(d‐ ).
Achie ingmo eb igh andconcen a edemissionspo s
in hecaseo imaging he esin
su aceis ela ed o he
highconcen a iono heNegasionsinsmalla easwi hin he esinsu ace
molecules,allowing oc ea ela gedensi y
o Ne
+
a hesespo sdue oanin ense he mal
ansi iono heNegaselec ons o he esinsu ace.Theseelec
onscaneasily lyo e abo e
he educedpo en ialene gy
ba ie (PEB),whichis educedbecauseo wo ac o s;The i s
isbecauseo alowe localwo k unc ion alue o heepoxycoa inglaye (2.97eV),which
educes heheigh o hePEBandso he acuumle el.Thesecondis
whenapplyingan
ex e nalelec os a ic ieldin hespace
be ween he woelec odes, hePEBshapewillchange
obe educedimage‐ oundedPEB,whichisknownas heScho ky‐No dheimSN‐PEB.The
opo hisSN‐PEBcanbe educedbyinc easing hein ensi yo heelec os a ic ield,and
whenapplyingex emelyin ense ields, he opo heSN‐PEBwillbelowe han heFe mi
le elo heusedma e ial,allowing heelec ons o he mal ans e omabo eo he
educedSN‐PEB[4].Thiscanhelp o highe densi yo Ne+ obec ea eda smallspo s,
and henbeingemi eda highe densi iesp o idingb igh e spo son heimagingsc een.
This heo yis alid oexplain he easonwhy he ieldionemissionp ocesss a eda lowe
ol ages o hecaseo coa edsamples(a 5.0kV)incompa isonwi hcase
o uncoa ed
samples(a 7.2kV).Inaddi ion o his, hecoa ed egionso hecoa edsampleswe eable
oope a ea highe ol ages(15.0kV)whencompa ed o heun‐coa edsamples(12.0kV).
Thisp o idesmo ee idenceo hehighe li e imeanddu abili yo hecoa edsamples.To
p o e his esul ,a omp obe omog aphyanalysiswasca iedou a 15.0kV o hecoa ed
samples,and he esul sa ediscussednex insubsec ion.
Ano he possibleexplana ioncanbediscussedwi hin hiscon ex ,since heNeions
willbeconcen a edwi hinasmall olumeabo e hesu ace, hismayallow o seconda y
Ne+ions obec ea edby hecollisionsbe ween hec ea edNe+ionsand heNeions,which
o cou secaninc ease hedensi yo hec ea edionsa heb igh egionsandso, he
impac edions o heimagingsc een.
3.2.A omP obeTomog aphyAnalysis
(a)
(b)
(c)
(d)
(e)
( )
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Thedis ibu ionandcomposi iono he
E‐478epoxy esinha ebeenin es iga edusing he
a omp obe omog aphy(APT) echnique(Figu e7).APTcanp o idequan i a i e
in o ma ionandexac posi ionso he esinmoleculesa g ainbounda ies; he esul scan
beob ainedwi h hehighes a ailablespa ial esolu ion.TheAPTmeasu emen swe e
pe o medon hesameins umen as heFIMmeasu emen s.Themeasu emen swe e
ca iedou in ol agemodea a empe a u eo 75Kandpulse ac ionso 5–15kVwi h
e apo a ion a es1–3%.Da ae alua ionwaspe o medwi hCameca’sTAP3Dso wa e.
Figu e7.
A omp obe omog aphyanalysiso ungs en‐epoxy(E‐478)composi eemi e .
TheAPT esul shows ha esinlaye wasno e apo a edsincenoneo heo ganic
compoundswe ede ec edasp esen edinFigu e7.Howe e , hecoa ed egionwas
de ec edbyei he hewhi e egions(no hingwasde ec ed)o bye apo a ing hesilicon
a oms om esinlaye .Thisise idenceo helong‐li e imeanddu abili yo heme al‐
insula o composi e ieldemi e s.
5.Conclusions
Wi hin hecon ex o his esea ch,i hasbeenp o en ha hecomposi esou ces
p oducesb igh andconcen a edemissionspo s.Inbo hemission echniques(FEMand
FIM), hesespo sa echa ac e izedbyhighe emissiondensi ies hanwha canbeachie ed
om heemissionp ocess oma egula ungs en ips.
Theemissionp ocesshasbeendiscussed h ough hea icleby hecon ex o he
c ea iono inducedconduc i echannels h ough hecoa inglaye bycha ging he esin
molecules h ough heioniza iono Negas, hendischa ging heinducedcha gewhen he
elec ons unnel h ough he esinlaye o heconduc i e egiono ungs ensu ace.The
esul sas ound omFEMandFIMs udiesshow ha usingcomposi eme al‐dielec ic ield
emi e sisap omisingme hodologyinp oducingelec on/ionbeamsou ces, hiswilladd
se e albene i s o he echnologyo heelec on/ionbeamins umen ssuchasscanning
elec on/ionmic oscopyand he ocusedelec on/ionbeamli hog aphyde ices.Becauseo
se e alad an ageso using his ypeo elec on/ionbeamsou ces,suchas he ocusedand
concen a edgene a edbeams.
Mo eo e , heAPTanalysisp o ideds onge idenceo hedu abili yo hecoa ed
samples,since he esinlaye wasno e apo a ede ena high ol ages.
P ep in s.o g (www.p ep in s.o g) | NOT PEER-REVIEWED | Pos ed: 30 July 2024 doi:10.20944/p ep in s202407.2357. 1
