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TA09-281: Micro-Electronics Radiation response variability for COTS devices Used in harsh Radiation environments

Slipikhin, Ivan; Söderström, Daniel; Sacristán Barbero, Mario; García Alía, Rubén

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RADNEXT Transnational Access Summary Report

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https://radnext.web.cern.ch/ https://www.linkedin.com/company/radnext EDMS NO. 3328174 VALIDITY Released REV. 1.0 DOI: 10.5281/zenodo.17287880 RADNEXT Transnational Access Summary Report Project title Micro-Electronics Radiation response variability for COTS devices Used in harsh Radiation environments Project TA identifier TA09-281 General application Space, high-energy accelerators, COTS Type of test SEE Group leader, Institute Ivan Slipukhin, CERN Co-authors, Institutes Daniel Söderström, Mario Sacristán Barbero, and Rubén García Alía, CERN Date(s) of the experiment 2024-04-25 and 2025-01-14 Facility RADEF Amount of access granted (unit of access: 1h) 20 Objectives of the experiments Lack of traceability and radiation effect response variability are huge issues to overcome for the reliable utilization of COTS electronic devices in the space environment. In 2023 CERN has started a project co-financed by ESA to explore potential methodologies to be applied to solve this issue. They are meant at taking advantage of the large procurements that CERN typically does with respect to the smaller ones used in the space field. It will also study the possibility of using alternative testing techniques (e.g., laser) to assess the response of device to ion stimuli and bound intra-lot and inter-lot variabilities. In the context of this experiment, a set of devices was tested with heavy ions to collect information on SEE cross sections, and to study the variability of cross sections between DUTs. Thanks to the data collected within this proposal it is possible to explore heavy ion SEE variability response in a wide variety of devices. This might shed more light on how to bound potential part-topart variability when far less devices are tested because of smaller lot procurements and tested sample sizes. Cross section curves as a function of LET, and visualized data on the differences between the number of collected SELs per DUT are presented in this report. The data shown here were presented at the NSREC REDW in 2025 [1], together with data from other test campaigns performed within the same project. EDMS 3328174 v.1 status In Work access Restricted PDF from TA09-281-Zenodo.doc modified 2025-10-07 15:50 https://radnext.web.cern.ch/ https://www.linkedin.com/company/radnext EDMS NO. 3328174 VALIDITY Released REV. 1.0 Experiment test report Tested devices and setup Single-event latch-up (SEL) was the main type of effect studied in the tested devices. The tested device references are listed in Table 1Table 1, together with the function the device has, such as low-dropout (LDO) regulator, analogue to digital converter (ADC), digital to analogue converter (DAC), or operational amplifier (Op-Amp). The studied effects in the devices are also listed, and apart from SEL, single-event upsets (SEU) and single-event functional interrupts (SEFI) were also investigated in the tested FLASH memory device. Table 1: Device references tested at RADEF in the experiment Reference Function Effects studied LT3083EQ#PBF Low Drop-Out (LDO) regulator SEL AD7291BCPZ Analog-to-Digital Converter (ADC) SEL ADS8320 Analog-to-Digital Converter (ADC) SEL AD7801BRUZ Digital-to-Analog Converter (DAC) SEL OPA2192 Operational amplifier SEL IS25LP128-JBLE 128 Mbit FLASH memory SEL, SEU, SEFI The DUTs were mounted on dedicated daughter boards, connected through ribbon cables to SEE Tester boards [2], which in turn were connected to a PC used to interface with the SEE Tester and control the test procedures. Daughter boards mounted in the RADEF vacuum chamber are shown in Figure 1, where the larger green boards on the top rows contain devices from Table 1: boards with 9 DUTs of the same reference in a grid pattern in the left figure, and 8 DUTs of the same reference in a circular pattern in the right figure. All 8 or 9 DUTs of the same type (on one daughter board) were irradiated simultaneously in the same beam window. Figure 1: DUT boards mounted in the RADEF vacuum chamber. The 10 and 16.3 MeV/n cocktails available at RADEF were utilized during the test, containing ions with surface LET values between 1.52 and 85.6 MeV/(mg/cm2). All tests were performed in vacuum, without specific temperature control or monitoring. https://radnext.web.cern.ch/ https://www.linkedin.com/company/radnext EDMS NO. 3328174 VALIDITY Released REV. 1.0 Results Measured SEE cross-section results and information of the observed part-to-part variability under irradiation are presented for each of the tested components in the following sections. LT3083EQ, LDO The SEL cross section data for the LDO linear regulator are shown in Figure 2, together with fitted Weibull function parameters. The data at the LET value of 9 MeV/(mg/cm2) was obtained while having 150 µm of Kapton in front of the DUTs while using the 16.3 MeV/n Ar-beam. The error bars represent 95 % confidence limits based on Poisson statistics of the SEL count, together with a 10 % estimated fluence uncertainty. Figure 2: The SEL cross section results per device for the linear regulator LT3083EQ#PBF The variability in the number of SEL counts per DUT at each run is shown in Figure 3, where the average and standard deviation of the number of SELs per DUT is shown graphically. This information is shown in table form as well in Table 2. https://radnext.web.cern.ch/ https://www.linkedin.com/company/radnext EDMS NO. 3328174 VALIDITY Released REV. 1.0 Figure 3: Variations in the number of SELs observed in the various DUTs tested in parallel of the LT3083EQ#PBF Table 2: Number of SELs per device in the LT3083EQ#PBF LET (MeV/(mg/cm2)) Total SEL sum Average SELs per DUT SELs standard deviation 1.52 364 45.50 9.82 2.3 332 41.50 6.80 7.2 407 50.88 11.66 9 360 45.00 6.48 13.3 504 63.00 10.14 24.5 458 57.25 5.04 38.8 341 42.63 10.55 48.5 535 66.88 15.38 AD7291BCPZ, ADC The SEL cross section data for the ADC AD7291BCPZ are shown in Figure 4Figure 2, together with fitted Weibull function parameters. The data at the LET values of 16 and 18.5 MeV/(mg/cm2) was obtained while having 100 and 150 µm of Kapton in front of the DUTs respectively, while using the 16.3 MeV/n Fe-beam. The error bars represent 95 % confidence limits based on Poisson statistics of the SEL count, together with a 10 % estimated fluence uncertainty. https://radnext.web.cern.ch/ https://www.linkedin.com/company/radnext EDMS NO. 3328174 VALIDITY Released REV. 1.0 Figure 4: SEL cross section results per device for the ADC AD7291BCPZ Figure 5: Variations in the number of SELs observed in the various DUTs of the ADC AD7291BCPZ https://radnext.web.cern.ch/ https://www.linkedin.com/company/radnext EDMS NO. 3328174 VALIDITY Released REV. 1.0 Table 3: Total, average, and standard deviation of the SELs per DUT of AD7291BCPZ LET (MeV/(mg/cm2)) Total SEL sum Average SELs per DUT SELs standard deviation 13.3 3 0.38 1.06 16 6 0.75 1.39 18.1 6 0.75 0.89 18.5 16 2.00 2.39 24.5 58 7.25 4.20 31.3 128 16.00 9.23 38.8 254 31.75 14.45 47.5 462 57.75 24.02 58.5 401 50.13 19.18 85.6 504 63.00 23.85 The variability in the number of SEL counts per DUT at each run is shown in Figure 5 and in Table 3. This DUT had the largest fluctuations in the observed SEL counts, due to one DUT (DUT6) showing a lower cross section response than the others. DUT5 on the other hand, was behaving in line with the other DUTs for some runs, e.g. the 1100-MeV Ag run using the 10 MeV/n cocktail, but after some time and a few runs the DUT started to have considerably more SELs than the others. The DUT5 is then suspected to have had some malfunction during the test, and it has been excluded from the average cross section curve in Figure 5, as well as from the results shown in Table 3. ADS8320, ADC The SEL cross section data for the ADC ADS8320 are shown in Figure 6Figure 2, together with fitted Weibull function parameters. LET values below 20 MeV/(mg/cm2) did not result in any SELs, and only the upper cross section limits are shown in the figure for these data points. Figure 6: Device SEL cross section results for the ADC ADS8320 The variability in the number of SEL counts per DUT at each run is shown in Figure 7 and Table 4. https://radnext.web.cern.ch/ https://www.linkedin.com/company/radnext EDMS NO. 3328174 VALIDITY Released REV. 1.0 Figure 7: Variations in the number of SELs observed in the various DUTs of the ADC ADS8320 Table 4: Total, average, and standard deviation of the SELs per DUT of ADS8320 LET (MeV/(mg/cm2)) Total SEL sum Average SELs per DUT SELs standard deviation 13.3 0 0.00 0.00 16 0 0.00 0.00 18.5 0 0.00 0.00 24.5 128 14.22 3.82 31.3 678 75.33 12.99 38.8 540 60.00 7.41 47.5 629 69.89 7.82 58.5 533 59.22 6.49 85.6 494 54.89 4.28 OPA2192, Op-Amp The SEL cross section data for the Op-Amp OPA2192 are shown in Figure 8Figure 2, together with fitted Weibull function parameters. The variability of the number of SEL counts per DUT at each run is shown in Figure 9 and Table 5. https://radnext.web.cern.ch/ https://www.linkedin.com/company/radnext EDMS NO. 3328174 VALIDITY Released REV. 1.0 Figure 8: Device SEL cross section results for Op-Amp OPA2192 Figure 9: Variations in the number of SELs in the Op-Amp OPA2192 DUTs Table 5: Total, average, and standard deviation of the SELs per DUT of the OPA2192 LET (MeV/(mg/cm2)) Total SEL sum Average SELs per DUT SELs standard deviation 7.2 5 0.63 0.70 9 37 4.63 2.18 13.3 278 34.75 6.10 24.5 539 67.38 9.64 38.8 544 68.00 6.54 48.5 513 64.13 4.68 https://radnext.web.cern.ch/ https://www.linkedin.com/company/radnext EDMS NO. 3328174 VALIDITY Released REV. 1.0 AD7801BRUZ, DAC The SEL cross section data for the DAC AD7801BRUZ are shown in Figure 10Figure 2, together with fitted Weibull function parameters. The variability of the number of SEL counts per DUT at each run is shown in Table 6 and Figure 11. Figure 10: Device SEL cross section results for DAC AD7801BRUZ Table 6: Total, average, and standard deviation of the SELs per DUT of the DAC AD7801BRUZ LET (MeV/(mg/cm2)) Total SEL sum Average SELs per DUT SELs standard deviation 9.7 486 60.75 14.42 13.3 471 58.88 11.13 24.5 484 60.50 9.64 38.8 579 72.38 4.21 48.5 456 57.00 8.53 85.6 410 51.25 7.43