Validation of sub wavelength holographic lithography in a semiconductor related approach within the EU funded Project HoliSTEP

Introduction Validation of sub wavelength holographic lithography in a semiconductor related approach within the EU funded Project HoliSTEP — C. Helkea,b, S. Schermera, M. Borisovc, D. Chelubeevc, V. Chernikc, V. Rakhovskiyc, A. Shamaevc, C. Spoerld, G. Konstantinoue, H. Meerfand D. Reutera,b aFraunhofer Institute for Electronic Nanosystems ENAS, Chemnitz, 09126, Germany b Chemnitz University of Technology, Center for Microtechnologies, Chemnitz, 09126, Germany c SWHL, Dübendorf, 8600, Switzerland, didonus, Hauterive, 2068, Switzerland e Mimotec, Sion, 1950, Switzerland, fCapgemini, Hamburg, 21129 , Germany ACKNOWLEDGEMENT This project has received funding from the European Union’s Horizon Europe research and innovation programme under grant agreement no 101137624. Views and opinions expressed are however those of the author(s) only and do not necessarily reflect those of the European Union. Neither the European Union nor UKRI can be held responsible for them. The authors also would like to thank all involved colleagues of Fraunhofer ENAS and ZfM of Technical University of Chemnitz for their support. Dr. Christian Helke — Head Lithography and Photonic Micro-/ Nanostructures Department Nano Device Technologies Tel. +49 371 45001-450 [email protected] Fraunhofer ENAS TechnologieCampus 3 / 09126 Chemnitz / Germany Introduction Advantages for 2.5D/3D Patterning HoliSTEP aims to validate an industrial prototype of sub-wavelength lithography stepper tool operating at 345 nm with 200 nm resolution, 25 nm alignment accuracy in an operational environment, demonstrating high-resolution 2D and 3D semiconductor and micro component devices manufacturing with optimized costs, broader production capabilities and reduced material wastage. First Holographic-Stepper in the world: ◼Enormous opportunity of 2D/2.5D/3D in combination with high DoF (> x100µm) ◼Lenses, individual and flexible 2.5D in nm scale ◼Up to large topographies and complex LIGA 2.5D/3D Layouts in thick resist Project Partner EU funded Project HoliSTEP: Sub-Wavelength Holographic Lithography Stepper for Integrated Circuit Production / Duration: 01/01/2024 – 31/12/2027 ◼Consists of simple elements of relatively large size without any corrective elements ◼Are produced by conventional mask manufacturing technology ◼Require no maintenance and repair as the holographic image is not sensitive to defects on the masks −Local defect on HL masks is not projected on image −Longer lifetime, minimal maintenance Initial topology Holographic mask structure for this topology eBeam –Vistec SB254 ▪Fully atomated ▪Shape Beam, 50 kV ▪Resolution > 20 nm ▪4”, 6”, 8”, special materials and susbtrates by waferhoalder, … Stepper –Nikon NSR2205i11D ▪Fully automated, UV i-line ▪1:5 Projection Lense ▪Resolution > 350 nm ▪6”, 8”, special materials and susbtrates by adapters/chucking Hitachi CD-SEM CS4800 ▪Fully automated ▪Resolution up to 2 nm ▪6“ thickness 275 µm - 775 µm ▪8“ thickness 725 µm ± 100 µm ▪Silicon and glass BrukerInsightCAP CD-AFM ▪Fully automated ▪High accuracy, repeatability ▪4”, 6” and 8” wafers ▪On-board Tip management / qualification system Nano-Lithography and Metrology Possibilities ENAS/ZfM Projection Lithography ◼Light source ◼Illumination optics ◼Mask ◼Projection lens ◼2D image on wafer Holographic Lithography ◼Light source ◼Illumination optics ◼Holographic mask ◼NO projection lens ◼2D/3D image ◼wafer with topography → very large DoF! Holographic masks combine ◼functions of a mask ◼optical projection system → thus eliminating a need of complex projection lens SWHL System Architecture Holographic Mask Unique capability to produce ◼High-resolution 3D structures in one single exposure ◼High-profile structures with high resolution in one single exposure ◼Grayscale lithography with cost efficient photomasks in one single exposure Figure 1: Schematic of HL within one exposure on different topography for high-resolution 2D/2.5D/3D structures and aimed structures for grayscale nanoand microstructures 2 µm 5 µm Figure 3: Simulation of defects on the exposure result Figure 2: HL mask schematic with the resulting structure and different HL mask types The HoLiSTEP consortium brings together industrial leaders and influential academics from 6 European countries: SWHL Development Innovation Management LIGA Process ApplicationAdaptive Optics & Alignment Life Cycle Assessment Laser Development Process Integration