Publisher's Note: Large memcapacitance and memristance at Nb:SrTiO3/La0.5Sr0.5Mn0.5Co0.5O3-delta topotactic redox interface (Appl. Phys. Lett. vol 116, 063502, 2020)

Appl. Phys. Le . 116, 099902 (2020); h ps://doi.o g/10.1063/5.0005777 116, 099902 © 2020 Au ho (s). Publishe 's No e: “La ge memcapaci ance and mem is ance a Nb:S TiO3/ La0.5S 0.5Mn0.5Co0.5O3-δ opo ac ic edox in e ace” [Appl. Phys. Le . 116, 063502 (2020)] Ci e as: Appl. Phys. Le . 116, 099902 (2020); h ps://doi.o g/10.1063/5.0005777 Submi ed: 24 Feb ua y 2020 . Published Online: 04 Ma ch 2020 W. Román Ace edo, C. A. M. an den Bosch, M. H. Agui e , C. Acha , A. Ca alla o , C. Fe ey a , M. J. Sánchez , L. Pa one, A. Aguade o, and D. Rubi ARTICLES YOU MAY BE INTERESTED IN La ge memcapaci ance and mem is ance a Nb:S TiO3/La0.5S 0.5Mn0.5Co0.5O3-δ opo ac ic edox in e ace Applied Physics Le e s 116, 063502 (2020); h ps://doi.o g/10.1063/1.5131854 E a um: “Solid-s a e cooling by s ess: A pe spec i e” [Appl. Phys. Le . 116, 050501 (2020)] Applied Physics Le e s 116, 099901 (2020); h ps://doi.o g/10.1063/5.0005286 Oxygen acancies: The (in) isible iend o oxide elec onics Applied Physics Le e s 116, 120505 (2020); h ps://doi.o g/10.1063/1.5143309 Publishe ’s No e: “La ge memcapaci ance and mem is ance a Nb:S TiO 3 /La 0.5 S 0.5 Mn 0.5 Co 0.5 O 3-d opo ac ic edox in e ace” [Appl. Phys. Le . 116, 063502 (2020)] Ci e as: Appl. Phys. Le . 116, 099902 (2020); doi: 10.1063/5.0005777 Submi ed: 24 Feb ua y 2020 .Published Online: 4 Ma ch 2020 W. Rom an Ace edo, 1,2 C. A. M. an den Bosch, 3 M. H. Agui e, 4,5,6 C. Acha, 2,7 A. Ca alla o, 3 C. Fe ey a, 1,2 M. J. S anchez, 8 L. Pa one, 9 A. Aguade o, 3,a) and D. Rubi 1,2,a) AFFILIATIONS 1 Comisi on Nacional de Ene g ıa A  ımica and Ins i u o de Nanociencia y Nano ecnolog ıa, Cen o A  ımico Cons i uyen es, 1650, Buenos Ai es, A gen ina 2 Consejo Nacional de In es igaciones Cien  ıficas y T ıcnicas, Godoy C uz 2290 (1425), Buenos Ai es, A gen ina 3 Depa men o Ma e ials, Impe ial College London, London SW7 2AZ, Uni ed Kingdom 4 Depa men o de F ısica de Ma e ia Condensada, Uni e sidad de Za agoza, Ped o Ce buna 12, 50009 Za agoza, Spain 5 Labo a o io de Mic oscop_ıas A anzada (LMA), Ins i u o de Nanociencia de A ag on (INA)-Uni e sidad de Za agoza, C/Ma iano Esquillo s/n. 50018 Za agoza, Spain 6 Ins i u o de Ciencias de Ma e iales de A ag on (ICMA), Uni e sidad de Za agoza, 50009 Za agoza, Spain 7 Dep o. de F ısica, FCEyN, Uni e sidad de Buenos Ai es & IFIBA, UBA-CONICET, Pab I, Ciudad Uni e si a ia, Buenos Ai es (1428), A gen ina 8 Ins i u o de Nanociencia y Nano ecnolog ıa (CONICET-CNEA), Cen o A  omico Ba iloche and Ins i u o Balsei o, 8400 San Ca los de Ba iloche, A gen ina 9 INTI, CMNB, A . G al Paz 5445, B1650KNA San Ma  ın, Buenos Ai es, A gen ina a) Au ho s o whom co espondence should be add essed: a.aguade o@impe ial.ac.uk and [email p o ec ed]m h ps://doi.o g/10.1063/5.0005777 This a icle was o iginally published online on 10 Feb ua y 2020 wi h inco ec bylines o numbe s 8 and 9. The bylines a e co ec as hey appea abo e. All online and p in e sions o he a icle we e co ec ed on 11 Feb ua y 2020. AIP Publishing apologizes o his e o . Appl. Phys. Le . 116, 099902 (2020); doi: 10.1063/5.0005777 116, 099902-1 Published unde license by AIP Publishing Applied Physics Le e s PUBLISHER NOTE sci a ion.o g/jou nal/apl